A semi-superjunction mosfet structure and manufacturing method thereof
A fabrication method and semi-superjunction technology, applied in the fields of semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as process capability limitations, expand application fields, increase trench depth, and achieve high withstand voltage capabilities. Effect
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Embodiment 1
[0076] The present invention provides a semi-superjunction MOSFET structure, please refer to image 3 , shown as a schematic diagram of the structure, comprising at least one transistor cell comprising:
[0077] An N-type heavily doped substrate 201 and an N-type auxiliary layer 202 and an N-type drift layer 203 sequentially formed on the N-type heavily doped substrate 201;
[0078] A first P column 204 and a second P column 205 are formed in the N-type drift layer 203;
[0079] The first P-type body region 206 and the second P-type body region 207 are connected to the tops of the first P-pillar 204 and the second P-pillar 205 respectively, and the first P-type body region 206 and the second P-type body region 207 is located in the N-type drift layer 203;
[0080] A gate structure is formed on the surface of the N-type drift layer 203; the gate structure is located between the first P column 204 and the second P column 205, and both ends of the gate structure are connected t...
Embodiment 2
[0089] The present invention also provides a method for fabricating a semi-superjunction MOSFET structure, comprising the following steps:
[0090] See first Figure 5 , performing step S1: providing a semiconductor substrate sequentially comprising an N-type heavily doped substrate 201 and a first N-type epitaxial layer 215 from bottom to top, and performing P-type impurity implantation on the top of the first N-type epitaxial layer 215 , forming a first pair of P island structures 2101 arranged at intervals. Wherein, the part of the first N-type epitaxial layer 215 below the first pair of P-island structures serves as an N-type auxiliary layer of the semi-superjunction MOSFET.
[0091] then see Figure 6 , performing step S2: forming a second N-type epitaxial layer 216 on the surface of the first N-type epitaxial layer 215, and performing P-type impurity implantation in the second N-type epitaxial layer 216 to form a second pair of P island structure 2102 ; the second pai...
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