Light-emitting diode and method of making the same

Abstract

The invention discloses a light emitting diode and a manufacturing method thereof. The manufacturing method of the light emitting diode comprises the following steps of manufacturing an epitaxial wafer on a substrate material; etching a wafer graph on the epitaxial wafer so as to expose a step and form a cutting channel; depositing a protecting layer on the front surface of the etched wafer; cutting the wafer on which the protecting layer is deposited along the cutting channel; cleaning side walls of the cutting channel; manufacturing a current barrier layer; manufacturing a current expanding conductive layer; forming a hole in the current expanding conductive layer; performing evaporation on the hole and the side walls of the cutting channel so as to manufacture a metal electrode; and manufacturing a passivation layer. The light emitting diode and the manufacturing method thereof are used for small-sized chips, the problems that the distance between a metal electrode P and a metal electrode N is over short due to the fact that the sizes of the chips are small and wire soldering cannot be carried out can be solved, and the quality of the chips is improved; and light shielding caused by excessive electrodes of high-power chips can be avoided, the luminous efficiency of the chips is improved, and the brightness is also improved.

Description

technical field [0001] The present application relates to a light-emitting diode and a manufacturing method thereof, and more particularly, to a method of manufacturing a metal electrode of a light-emitting diode. Background technique [0002] A light-emitting diode (Light-Emitting Diode, referred to as LED) is a semiconductor electronic device that converts electrical energy into light energy. When electric current flows, electrons and holes recombine in it to emit monochromatic light. As a new type of high-efficiency, environmentally friendly and green solid-state lighting source, LED has the advantages of low voltage, low power consumption, small size, light weight, long life, high reliability, etc., and is being rapidly and widely used. Such as traffic lights, car interior and exterior lights, urban landscape lighting, mobile phone backlight, outdoor full-color display screens, etc. Especially in the field of lighting, high-power chips are the trend of LED development ...

AI Technical Summary

Problems solved by technology

For example, most of the photons return to the inside of the semiconductor due to total reflection at the interface between the semiconductor and the outside. The total reflection light is absorbed by the active layer itself, the substrate, the electrode, etc. and cannot be emitted. Therefore, the external light extraction efficiency of a general LED chip is higher than the internal quantum efficiency much lower

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