A Doherty Differential Power Amplifier Using Voltage Combination
A differential power amplifier and voltage technology, applied in differential amplifiers, DC-coupled DC amplifiers, power amplifiers, etc., can solve the problems of large chip area, complex circuit structure, and it is difficult for Doherty power amplifiers to apply differential structure CMOS power amplifiers. Compact and efficient effect
Active Publication Date: 2018-01-16
RDA MICROELECTRONICS TECH SHANGHAI CO LTD
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Problems solved by technology
If it is changed to a differential structure, in order to achieve impedance matching, each differential branch must use a λ / 4 transmission line, which will occupy a large chip area and make the circuit structure more complicated
Therefore, the commonly used Doherty power amplifier is difficult to apply to the CMOS power amplifier of the differential structure.
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[0024] see Figure 4 , which is the first embodiment of the Doherty differential power amplifier of the present application. It includes a power divider 10 , multiple differential power amplifier pairs 21 , 22 , . . . , a converter 40 , and an impedance converter 51 .
[0025] The power divider 10 divides the input single-ended radio frequency signal into four radio frequency signals with equal amplitude and 90° phase difference. These four signals are recorded as 0° signal, 90° signal, 180° signal and 270° signal respectively, and constitute two pairs of differential signals respectively.
[0026] The differential power amplifier pairs 21 , 22 , . . . are used to amplify a pair of differential signals with equal amplitude and 180° phase difference for output. Each differential power amplifier pair is composed of two power amplifier units, and a typical power amplifier unit uses CMOS transistors. CMOS transistors have a cut-off region, a non-saturated region (variable resis...
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This application discloses a Doherty differential power amplifier. The power divider divides the single-ended signal into four signals with equal amplitude and 90° phase difference. At least one differential power amplifier pair is used as a main power amplifier, and the rest of the differential power amplifiers are used as auxiliary power amplifiers. The main power amplifier has a first DC bias signal. The maximum DC bias signal of the auxiliary power amplifier is called the second DC bias signal, and the first DC bias signal is greater than the second DC bias signal. Converters consist of multiple inductors. The primary coil of each inductor is connected to a differential power amplifier pair. A differential power amplifier with the same DC bias signal is connected to the secondary coil of the connected inductor. The impedance transformer is connected to the secondary coil of the inductor connected to the differential power amplifier pair with different DC bias signals. The Doherty differential power amplifier of the present application has the characteristics of high efficiency at a back-off power point, compact size, and is suitable for a differential CMOS power amplifier structure.
Description
technical field [0001] This application relates to a radio frequency power amplifier (power amplifier). Background technique [0002] The third-generation and fourth-generation mobile communication standards generally use OFDM (orthogonal frequency division multiplexing), QAM (quadrature amplitude modulation) and other modulation methods, which have the advantages of large amount of transmitted data and strong anti-multipath fading ability. However, higher design requirements are put forward for the transmitting module of the radio frequency front end, especially the design of the radio frequency power amplifier. Its higher peak-to-average ratio requires the RF power amplifier to work at a higher back-off power point. For example, for the LTE system, the peak-to-average ratio of the modulated signal is usually 6-10dB, so the RF power amplifier is required to work at a fallback power point that is 6-10dB lower than the saturation power point most of the time, and the general...
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IPC IPC(8): H03F1/07H03F3/45H03F3/20
Inventor 金博识叶晓斌肖郡胡海星魏述然
Owner RDA MICROELECTRONICS TECH SHANGHAI CO LTD