Method for preparing anti-potential induced degradation solar cell

Abstract

The invention discloses a method for preparing an anti-potential induced degradation (PID) solar cell, comprising the following steps: (a) forming a suede surface on the surface of a silicon wafer; (b) thermally diffusing the silicon wafer to prepare a p-n junction; (c) removing a piece of phosphorus silicon glass from the diffused silicon wafer; (d) performing ozone oxidation treatment on the silicon wafer; (e) preparing a silicon nitride antireflective film on the front of the silicon wafer; and (f) preparing front and back metal electrodes by silk screen printing. By adopting the method of the invention, the yield of anti-PID cells is improved, and the anti-PID performance of cells is enhanced. In addition, the conversion efficiency of cells can be improved due to excellent passivation performance of a dense silicon dioxide layer.

Description

technical field [0001] The present invention relates to the technical field of solar cells, and more particularly to a preparation method of a solar cell with anti-potential induced decay. Background technique [0002] Potential Induced Decay (PID) refers to the phenomenon of power drop of solar cell modules under the action of high temperature, high humidity and high voltage. In the power generation state, the solar cell module will have different degrees of potential-induced attenuation in about five years, which has become a major problem in the field of photovoltaic power generation. [0003] At present, the anti-PID technology on the battery side mainly focuses on the silicon dioxide / silicon nitride stack technology, and the anti-PID performance of this composite film has been highly recognized by the industry. In the preparation of the silicon dioxide / silicon nitride stack, the silicon dioxide layer is the key point, which directly affects the anti-PID performance of ...

AI Technical Summary

Problems solved by technology

There are two methods for the preparation of the silicon dioxide layer: one is to use PECVD technology to ionize N2O / SiH4 to deposit a silicon dioxide layer, but the silicon dioxide layer of this technology is poor in density and seriously damages the graphite boat and furnace tube , will also reduce the conversion efficiency of the battery; one is to add an ozone oxidation device to the PSG removal equipment to oxidize the surface of the silicon wafer to form a silicon dioxide layer. This technology is low in cost and simple in process, and can also improve the conversion of the battery Efficiency is the top priority of current anti-PID technology

[0004] Ozone anti-PID technology also has some disadvantages, such as a high proportion of bad battery appearance, and the compactness of the silicon dioxide layer needs to be improved, etc., which also restricts the wider promotion of this technology. Therefore, it is urgent to improve the ozone anti-PID technology

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