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Preparation process of high temperature electrothermal film

A preparation process and technology of electrothermal film, applied in electrothermal devices, ohmic resistance heating, electrical components, etc., can solve the problems of high melting point, low resistance, high hardness, etc., and achieve high thermal conversion rate, compact structure, and stable crystalline performance. Effect

Inactive Publication Date: 2018-04-20
SOUTHWEST UNIVERSITY FOR NATIONALITIES
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Compared with traditional heating materials, it has the characteristics of high melting point, high hardness, low resistance, high thermal efficiency, and good chemical stability. The research on low-temperature electrothermal film has been quite mature, but the research on high-temperature electrothermal film, especially the research on thermal conversion Therefore, it is of great significance to find an easy synthesis method to further study the various properties of the electrothermal film.

Method used

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  • Preparation process of high temperature electrothermal film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0013] S1. Take 100ml of alcohol and place it in a conical flask, heat it to 80°C, add 17.529g of tin tetrachloride and 0.57g of antimony trichloride to seal it, and stir at a constant temperature of 80°C for one hour;

[0014] S2. After standing the solution obtained in step S1 for 2 hours, use a glue-spreader on the quartz substrate to evenly coat 15 layers at a speed of 5.0kr / min. After the coating is completed, naturally cool down to room temperature to deposit colloid;

[0015] S3. The quartz substrate obtained in step S2 is placed in an atmosphere high-temperature furnace at 450° C. and sintered for 4 hours to obtain a finished product.

Embodiment 2

[0017] Take 100ml of alcohol and put it in a conical flask, heat it to 80°C, add 17.529g of tin tetrachloride and 0.57g of antimony trichloride to seal it, and stir at a constant temperature of 80°C for one hour;

[0018] S2. After the solution obtained in step S1 is allowed to stand for 2 hours, 20 layers of glue are evenly coated on the quartz substrate using a glue homogenizer at a speed of 5.0kr / min. After the coating is completed, the temperature is naturally cooled to room temperature to deposit colloid;

[0019] S3. The quartz substrate obtained in step S2 is placed in an atmosphere high-temperature furnace at 450° C. and sintered for 4 hours to obtain a finished product.

Embodiment 3

[0021] Take 100ml of alcohol and put it in a conical flask, heat it to 80°C, add 17.529g of tin tetrachloride and 0.57g of antimony trichloride to seal it, and stir at a constant temperature of 80°C for one hour;

[0022] S2. After standing the solution obtained in step S1 for 2 hours, use a glue-smoother on the quartz substrate to evenly coat 18 layers at a speed of 5.0kr / min. After the coating is completed, naturally cool down to room temperature to deposit colloid;

[0023] S3. The quartz substrate obtained in step S2 is placed in an atmosphere high-temperature furnace at 450° C. and sintered for 4 hours to obtain a finished product.

[0024] After testing, the XRD patterns of the thin film structures obtained in Examples 1-3 at a temperature of 450°C are as follows: figure 1 shown.

[0025] The invention can prepare thin films under lower temperature conditions, can accurately control the amount of dopants, and can prepare SnO with a larger area. 2 It is incomparable wit...

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Abstract

The invention discloses a preparation process of a high-temperature electrothermal film, which comprises the following steps: taking 100ml of alcohol and placing it in a conical flask, heating it to 80°C, adding 17.529g of tin tetrachloride and 0.57g of antimony trichloride to seal it, and Stir at a constant temperature of 80°C for one hour; after standing for 2 hours, use a glue homogenizer to uniformly coat 15-20 layers on the quartz substrate at a speed of 5.0kr / min. After the coating is completed, cool down to room temperature naturally to deposit the colloid; The obtained quartz substrate is placed in an atmosphere high-temperature furnace at 450° C., and after sintering for 4 hours, a finished product is obtained. The electrothermal film prepared by the invention has stable performance and high heat conversion rate.

Description

technical field [0001] The invention relates to the field of preparation technology of a high temperature electric heating film, in particular to a preparation technology of a high temperature electric heating film. Background technique [0002] Semiconductor Electroheafing Film (SEI-IF), also known as metal oxide electrothermal film, is a kind of electrothermal film with great application potential. Uneven temperature occurs. Become a safe "smart" heating material. Compared with traditional heating materials, it has the characteristics of high melting point, high hardness, low resistance, high thermal efficiency and good chemical stability. Therefore, finding an easy synthesis method is of great significance to further study the various properties of electrothermal membranes. SUMMARY OF THE INVENTION [0003] In order to solve the above problems, the present invention provides a preparation process of a high-temperature electrothermal film, which adopts a high-temperat...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H05B3/34
Inventor 徐敏
Owner SOUTHWEST UNIVERSITY FOR NATIONALITIES
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