IGBT device fault detection method and corresponding detection circuit

A fault detection and device technology, applied in the semiconductor field, can solve the problems of high cost, high price, unusable modules, etc., and achieve the effect of easy operation and low cost
CN104880657AActive Publication Date: 2015-09-02XIAN YONGDIAN ELECTRIC
4 Cites 9 Cited by

Patent Information

Authority / Receiving Office
CN ยท China
Current Assignee / Owner
XIAN YONGDIAN ELECTRIC
Publication Date
2015-09-02

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
Patent Text Reader

Abstract

The invention discloses an IGBT device fault detection method and a corresponding detection circuit. The fault detection method comprises the steps of: S1, arranging comparators corresponding with the number of bonding leads, presetting a comparison value among a plurality of comparators, and setting a programmable device electrically connecting with the plurality of comparators; S2, after an IGBT device is open, measuring the grid voltage value of the IGBT device, and inputting the grid voltage value into the plurality of comparators to compare with the comparison value among the plurality of comparators, the comparators correspondingly feeding back a first signal and a second signal; and S3, outputting a feedback result of the plurality of comparators by the programmable device to generate an output signal. According to the IGBT device fault detection method, without dismounting the IGBT device, whether the bonding leads exist falling off phenomena and the number of leads fallen off can be determined in advance, thereby avoiding falling off of other leads caused by falling off of one lead, and finally avoiding faults of the IGBT device or even system paralysis.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The present invention relates to the technical field of semiconductors, in particular to a fault detection method of an IGBT device and a detection circuit for realizing the fault detection method of the IGBT device. Background technique

[0002] Insulated gate bipolar transistor (IGBT module for short) is an ideal full-control device, which has the advantages of high operating frequency, large processing power and simple driving. IGBT modules are more and more widely used in power electronic equipment, especially high-frequency large and medium-sized power equipment. At present, the module capacity has reached 400A-2400A / 1200V-6500V, meeting the application requirements in the field of power electronics and power transmission. However, equipment failures caused by IGBT failures often bring huge human and material losses.

[0003] The failure of the IGBT module is the result of the gradual accumulation of internal fatigue of the module and the intera...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More