IGBT device fault detection method and corresponding detection circuit

A fault detection and device technology, applied in the semiconductor field, can solve the problems of high cost, high price, unusable modules, etc., and achieve the effect of easy operation and low cost

Active Publication Date: 2015-09-02
XIAN YONGDIAN ELECTRIC
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, when disassembling the module, it is required to remove the IGBT module plastic shell and silicone gel, which is a destructive observation. After the failure point is observed, the module cannot be used, and the cost is high.
In addition, when disassembling the module for inspect

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  • IGBT device fault detection method and corresponding detection circuit
  • IGBT device fault detection method and corresponding detection circuit

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Embodiment Construction

[0021] In order to enable those skilled in the art to better understand the technical solutions in the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described The embodiments are only some of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0022] Such as figure 1 As shown, the IGBT device includes a chip and several bonding wires electrically connected to the chip. The position where the bonding wire is connected to the chip is a bonding point, and there is a problem of cracking in the bonding point in the actual process. The fault detection method of the IGBT device of the pre...

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Abstract

The invention discloses an IGBT device fault detection method and a corresponding detection circuit. The fault detection method comprises the steps of: S1, arranging comparators corresponding with the number of bonding leads, presetting a comparison value among a plurality of comparators, and setting a programmable device electrically connecting with the plurality of comparators; S2, after an IGBT device is open, measuring the grid voltage value of the IGBT device, and inputting the grid voltage value into the plurality of comparators to compare with the comparison value among the plurality of comparators, the comparators correspondingly feeding back a first signal and a second signal; and S3, outputting a feedback result of the plurality of comparators by the programmable device to generate an output signal. According to the IGBT device fault detection method, without dismounting the IGBT device, whether the bonding leads exist falling off phenomena and the number of leads fallen off can be determined in advance, thereby avoiding falling off of other leads caused by falling off of one lead, and finally avoiding faults of the IGBT device or even system paralysis.

Description

technical field [0001] The present invention relates to the technical field of semiconductors, in particular to a fault detection method of an IGBT device and a detection circuit for realizing the fault detection method of the IGBT device. Background technique [0002] Insulated gate bipolar transistor (IGBT module for short) is an ideal full-control device, which has the advantages of high operating frequency, large processing power and simple driving. IGBT modules are more and more widely used in power electronic equipment, especially high-frequency large and medium-sized power equipment. At present, the module capacity has reached 400A-2400A / 1200V-6500V, meeting the application requirements in the field of power electronics and power transmission. However, equipment failures caused by IGBT failures often bring huge human and material losses. [0003] The failure of the IGBT module is the result of the gradual accumulation of internal fatigue of the module and the intera...

Claims

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Application Information

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IPC IPC(8): G01R31/26
Inventor 曹琳
Owner XIAN YONGDIAN ELECTRIC
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