Pixel equivalent circuit and testing method for focal plane array infrared detector

Abstract

The invention provides a pixel equivalent circuit and a testing method for a focal plane array (FPA) infrared detector. The pixel equivalent circuit comprises an equivalent blind pixel, an equivalent effective pixel, and a reading circuit. The equivalent blind pixel is used for simulating a MEMS blind pixel and providing an equivalent contrast signal. The equivalent effective pixel is used for simulating a MEMS effective pixel and providing an equivalent detecting signal. The reading circuit is used for amplifying and reading the equivalent contrast signal and the equivalent detecting signal. The equivalent blind pixel comprises a first MOS transistor and a first switch. The equivalent effective pixel comprises a second MOS transistor and a second switch. The pixel equivalent circuit and THE testing method have following beneficial effects of (1) obviously improving the production efficiency and product yield of the FPA infrared detector; (2) achieving full function testing on unmanufactured MEMS structure in the surface-array infrared detector; and (3) reducing the testing packaging cost of the FPA infrared detector.

Description

Technical field [0001] The invention belongs to the field of MEMS and integrated circuit design, and particularly relates to a pixel equivalent circuit and a test method of an area array infrared detector. Background technique [0002] Infrared Detector (Infrared Detector) is a device that converts incident infrared radiation signals into electrical signals for output. Infrared radiation is an electromagnetic wave with a wavelength between visible light and microwave, which is imperceptible to the human eye. To detect the existence of this radiation and measure its strength, it must be transformed into other physical quantities that can be detected and measured. Generally speaking, any effect caused by infrared radiation irradiating an object can be used to measure the intensity of infrared radiation as long as the effect can be measured and is sensitive enough. Modern infrared detectors mainly use infrared thermal effect and photoelectric effect. The output of these effects i...

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Problems solved by technology

[0008] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a pixel equivalent circuit and testing method of an area array infrared detector, which is used to solve the problem of the front array infrared detector formed by MEMS pixels in the prior art. The unpredictable performance of the readout circuit leads to the increase of manufacturing cost and packaging cost

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