A pixel equivalent circuit and testing method of an area array infrared detector

An infrared detector and equivalent circuit technology, applied in the field of MEMS and integrated circuit design, can solve the problems of unpredictable readout circuit performance, increased manufacturing cost and packaging cost, etc., to achieve full-function testing, reduce test packaging costs, The effect of improving production efficiency and product yield

Active Publication Date: 2018-07-24
CHINA RESOURCES MICROELECTRONICS (CHONGQING) CO LTD
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Problems solved by technology

[0008] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a pixel equivalent circuit and testing method of an area array infrared detector, which is used to solve the problem of the front array infrared detector formed by MEMS pixels in the prior art. The unpredictable performance of the readout circuit leads to the increase of manufacturing cost and packaging cost

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  • A pixel equivalent circuit and testing method of an area array infrared detector
  • A pixel equivalent circuit and testing method of an area array infrared detector
  • A pixel equivalent circuit and testing method of an area array infrared detector

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Embodiment Construction

[0043] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0044] see Figure 1 ~ Figure 3. It should be noted that the diagrams provided in this embodiment are only schematically illustrating the basic idea of ​​the present invention, and only the components related to the present invention are shown in the diagrams rather than the number, shape and shape of the components in actual implementation. Dimensional drawing, the type, quantity and proportion of each component can be changed arbit...

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Abstract

The present invention provides an equivalent circuit of a pixel of an area array infrared detector and a testing method thereof, wherein the equivalent circuit of a pixel includes: an equivalent blind pixel used to simulate a MEMS blind pixel and provide an equivalent control signal; etc. The effective effective pixel is used to simulate the MEMS effective pixel to provide an equivalent detection signal; the readout circuit is used to amplify and read out the equivalent control signal and the equivalent detection signal; the equivalent blind pixel It includes a first MOS tube and a first switch, and the equivalent effective pixel includes a second MOS tube and a second switch. The invention has the following beneficial effects: 1) It can significantly improve the production efficiency and product yield of the area array infrared detector; 2) It realizes the full-function test of the MEMS structure in the area array infrared detector; Test package cost for detector products.

Description

technical field [0001] The invention belongs to the field of MEMS and integrated circuit design, in particular to a pixel equivalent circuit and a testing method of an area-array infrared detector. Background technique [0002] The infrared detector (Infrared Detector) is a device that converts the incident infrared radiation signal into an electrical signal output. Infrared radiation is electromagnetic waves with wavelengths between visible light and microwaves, which cannot be detected by the human eye. To detect the existence of this radiation and measure its strength, it must be transformed into other physical quantities that can be detected and measured. Generally speaking, any effect caused by infrared radiation irradiating an object can be used to measure the intensity of infrared radiation as long as the effect can be measured and is sensitive enough. Modern infrared detectors mainly use infrared thermal effect and photoelectric effect. The output of these effects...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01J5/02G01J5/00
Inventor 朱磊陈立颖孙东昱薛璐
Owner CHINA RESOURCES MICROELECTRONICS (CHONGQING) CO LTD
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