Thin film transistor, manufacturing method thereof, array substrate, and display device

Abstract

The present invention relates to a thin film transistor, its manufacturing method, an array substrate, and a display device. The thin film transistor includes: an active layer; an optical layer arranged on and / or under the active layer; A protective layer, the optical protective layer is used for absorbing light waves with a wavelength smaller than a preset wavelength. According to the technical solution of the present invention, by arranging a photoprotective layer above the active layer, it is possible to absorb light that enters the channel region from above the thin film transistor, and by arranging a photoprotective layer below the active layer, it is possible to absorb The light entering the channel region can effectively prevent the light from affecting the active layer of the channel region, and ensure that the driving transistor in the thin film transistor has strong photostability.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a thin film transistor, a manufacturing method of the thin film transistor, an array substrate and a display device. Background technique [0002] At present, the oxide semiconductor materials that have been studied more include IGZO (Indium Gallium Zinc Oxide), ITZO (Indium Tin Zinc Oxide), etc. There are a large number of oxygen vacancy defect states in these oxide materials, and the oxygen vacancy defect states contain two electrons, when these oxides in the transistor (TFT) are irradiated by light, the electrons in the oxygen vacancies are excited and jump to the vicinity of the conduction band of the oxide material; when the light is removed, the photogenerated electrons caused by the oxygen vacancies return to the ground state The speed is slow, which leads to a large leakage current of the TFT and poor photostability of the TFT. [0003] At present, the industry mostly u...

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Problems solved by technology

[0004] However, the above-mentioned method of shielding the TFT with an organic material is only applicable to the case where the light source is illuminated from the top of the TFT. When the TFT has a bottom-gate or top-gate structure, and the light is incident from the bottom of the TFT, that is, the light source is incident on the TFT through the substrate, such as figure 2 and image 3 As shown, the above-mentioned method of blocking the TFT with organic materials is no longer applicable, and the light will still irradiate the active layer of the channel region, causing the TFT to generate a large leakage current

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