Debris Containment System with Reduced Optical Component Thermal Distortion and High Transmission Efficiency

A technology of thermal deformation and high transmission, applied in the semiconductor field, can solve the problems of thermal deformation of the secondary mirror, affect the exposure quality, and instability of the light spot at the intermediate focus, and achieve the effects of reducing thermal deformation, improving transmission efficiency, and increasing transmittance

Inactive Publication Date: 2017-06-23
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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Problems solved by technology

The light irradiated on the back of the secondary mirror will cause the thermal deformation of the secondary mirror, which will lead to the instability of the spot at the intermediate focal point, and then affect the subsequent exposure quality

Method used

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  • Debris Containment System with Reduced Optical Component Thermal Distortion and High Transmission Efficiency
  • Debris Containment System with Reduced Optical Component Thermal Distortion and High Transmission Efficiency

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Embodiment Construction

[0016] The present invention will be described in further detail below in conjunction with the accompanying drawings.

[0017] Such as figure 1 As shown, the debris suppression system with reduced thermal deformation of optical components and high transmission efficiency is mainly composed of debris blocking cover 1 , debris deflector 2 and radiation blocker 3 . When the light source generates EUV radiation, the electrode will lose, thus forming a large amount of debris, which includes neutral particles, charged particles and residual discharge gas, etc., which will affect the transmission efficiency of EUV and affect the optical components downstream of the beamline. Surfaces are heavily soiled and damaged.

[0018] The main function of the debris blocking cover 1 is to block most of the debris from entering the subsequent beamline without affecting the emission angle of the light source point. A coolant channel 7 is processed inside the debris blocking cover 1, and the tem...

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Abstract

A debris suppression system with reduced thermal deformation of optical elements and high transmission efficiency belongs to the field of semiconductor technology. In order to reduce the thermal deformation of the secondary mirror and improve the transmission efficiency of EUV, there is a cooling fluid circulation channel inside the debris blocking cover. The debris blocking cover is installed at the position of the debris deflector close to the light source point along the axial direction of the debris deflector; the debris deflector is composed of an outer wall and a hollow part, and a first permanent magnet with opposite polarity is installed in the middle of the outer wall; The outer wall of the debris deflector has air inlet holes at a position away from the light source point, and the inside of the outer wall has evenly distributed air outlet holes; the interior of the debris deflector is evenly arranged with coolant channels; the radiation blocker is installed on the axis of the debris deflector and is located at The back of the optical element can completely cover the optical element; the shape of the radiation blocker is conical, and it is designed according to the divergence angle of the light source point and the diameter of the optical element; there is a coolant circulation channel inside the radiation blocker.

Description

technical field [0001] The invention relates to a debris suppression system used in EUV exposure experiments, which has the function of reducing thermal deformation of optical elements and high transmission efficiency, and belongs to the technical field of semiconductors. Background technique [0002] EUV lithography technology is a reasonable extension of 193nm lithography technology to 13.5nm EUV band. It inherits the development achievements of traditional optical lithography to the greatest extent, improves the quality of reticle and increases the density of reticle as much as possible. According to the new version of the International Semiconductor Technology Development Roadmap (ITRS), it is predicted that the 32nm technology node will be entered in 2013, and the mass production of the 22nm technology node will be realized in 2016. As lithography technology enters the 32-22nm node, the status of extreme ultraviolet lithography (EUVL) as the mainstream lithography techn...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/20
Inventor 龚学鹏卢启鹏彭忠琦王依周烽谢耀
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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