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A kind of pressure sensor and preparation method thereof

A technology of pressure sensor and laser, which is applied in the direction of instruments, measuring force, measuring devices, etc., can solve the problems of complex production process, limited practicability, and complicated manufacturing process of flexible pressure sensor devices

Active Publication Date: 2017-09-08
UNIV OF SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although such devices have high sensitivity in a small pressure range (<1kPa), they need to make metal electrodes on flexible substrates, and the manufacturing process is complicated, which limits their practicability
[0004] Flexible pressure sensor devices only use the characteristic of piezoresistive effect, although their sensitivity in a small pressure range (<1kPa) has been significantly enhanced compared with diffused silicon pressure sensors, but they require materials to have significant piezoresistive effect, and this The production process of this kind of flexible pressure sensor device is complex

Method used

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  • A kind of pressure sensor and preparation method thereof
  • A kind of pressure sensor and preparation method thereof
  • A kind of pressure sensor and preparation method thereof

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preparation example Construction

[0028] The embodiment of the present invention discloses a preparation method of a pressure sensor, comprising the following steps:

[0029] The graphene oxide solution is dropped on the substrate, and the graphene oxide film is obtained after drying;

[0030] Laser photolithography is carried out on the graphene oxide film respectively to obtain the laser-reduced graphene oxide interdigitated electrode layer and the laser-reduced graphene oxide conductive layer;

[0031] Cutting the laser-reduced graphene oxide interdigitated electrode layer and the laser-reduced graphene oxide conductive layer respectively, and then cutting the interdigitated part of the laser-reduced graphene oxide interdigitated electrode layer and the laser-reduced graphene oxide interdigitated electrode layer The conductive layers are overlapped to obtain a pressure sensor.

[0032] The preparation method of the pressure sensor provided by this application is to use laser reduction graphene oxide, which...

Embodiment 1

[0047] 1) Spread a prototype methylsiloxane (PDMS) film with a diameter of 90 mm in a glass petri dish with a diameter of 120 mm;

[0048] 2) Configure 2mg / mL graphene oxide aqueous solution, measure 30mL and import it into the glass petri dish in 1), after the water volatilizes naturally, the graphene oxide forms a film covering the surface of PDMS;

[0049] 3) Using a laser to photoetch interdigitated electrodes and conductive patterns on the graphene oxide film, wherein the interdigitated electrodes are 1.2mm wide and 1.2mm apart, 2 pairs in total, and the conductive patterns are cuboids with a length of 10mm and a width of 8mm;

[0050] 4) Cut out the above graphics and contact them face to face to obtain a pressure sensor.

[0051] Connect the graphene interdigitated electrode of the pressure sensor to the test instrument, and measure the pressure sensor, the results are as follows figure 2 , image 3 , Figure 4 , Figure 5 shown, where figure 2 The curve diagram ...

Embodiment 2

[0053] 1) Spread a prototype methylsiloxane (PDMS) film with a diameter of 90 mm in a glass petri dish with a diameter of 120 mm;

[0054] 2) Configure a 1mg / mL graphene oxide aqueous solution, measure 30mL and import it into the glass petri dish in 1), and after the water volatilizes naturally, the graphene oxide forms a film covering the surface of PDMS;

[0055] 3) Use a laser to lithographically print interdigitated electrodes and conductive patterns on the graphene oxide film; the interdigitated electrodes are 0.4mm wide and 1.2mm apart, 3 pairs in total, and the conductive pattern is a cuboid with a length of 10mm and a width of 8mm;

[0056] 4) Cut out the above graphics and contact them face to face to obtain a pressure sensor.

[0057] Connect the graphene interdigitated electrode of the pressure sensor to the test instrument to measure the pressure sensor, such as Figure 6 as shown, Figure 6 For the curve diagram of the relative change rate of the pressure sensor...

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Abstract

The application provides a method for preparing a pressure sensor. First, the graphene oxide solution is dropped on the substrate, and the graphene oxide film is obtained after drying; graphene oxide interdigitated electrode layer and laser-reduced graphene oxide conductive layer; finally, the laser-reduced graphene oxide interdigitated electrode layer and the laser-reduced graphene oxide conductive layer are cut off respectively, and the laser-reduced graphite oxide The interdigitated portion of the ene interdigitated electrode layer overlaps with the conductive layer of the laser-reduced graphene oxide to obtain a pressure sensor. The present application also provides a pressure sensor, including: a laser-reduced graphene oxide interdigitated electrode layer and a laser-reduced graphene oxide conductive layer, the interdigitated part of the laser-reduced graphene oxide interdigitated electrode layer is provided with a laser-reduced graphene oxide conductive layer. The pressure sensor of the present application can detect the pressure below 1kPa, and has high sensitivity.

Description

technical field [0001] The invention relates to the technical field of skin sensors, in particular to a pressure sensor and a preparation method thereof. Background technique [0002] When a solid is subjected to a force, its resistivity will change. This effect is called piezoresistive effect. The piezoresistive effect of semiconductor materials is particularly strong. There are two types of piezoresistive sensors made of semiconductor materials, one is the adhesive strain gauge made of the volume resistance of the semiconductor material, and the other is the diffused resistor made of the integrated circuit technology on the substrate of the semiconductor material, called It is a diffusion piezoresistive sensor. The main material of piezoresistive pressure sensors that are widely used at present is diffused silicon semiconductor, and the structure is mainly diaphragm type. The principle of piezoresistive pressure sensor for pressure detection is mainly based on the fact ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01L1/20
Inventor 朱芸松潘楠王晓平
Owner UNIV OF SCI & TECH OF CHINA