Photonasty polysiloxane compound and application thereof
A technology of polysiloxane and composition, applied in the field of positive photosensitive siloxane composition, which can solve the requirements of yellowing, ITO pattern visibility and high temperature curing, which cannot be accepted by the industry, and the pattern sensitivity is reduced And other issues
Active Publication Date: 2015-09-30
CHI MEI CORP
View PDF9 Cites 6 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
However, because these materials contain a large amount of quinone diazide compounds and phenolic hydroxyl groups in polysiloxane compounds, whitening may occur during the coating process or yellowing may occur during heat curing, so they cannot be used as highly transparent materials. Material
Furthermore, these materials have low transparency, which reduces the sensitivity of pattern formation.
In addition, the ITO pattern visibility and high temperature curing requirements of these materials are not acceptable to the industry
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment 2 to 11
[0191] Similar to the aforementioned photosensitive polysiloxane composition Example 1, with the components and usage amounts shown in Table 2, use a shaker to stir, dissolve and mix to prepare the photosensitive resin composition example 2 to 11.
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
| Property | Measurement | Unit |
|---|---|---|
| particle diameter | aaaaa | aaaaa |
| particle diameter | aaaaa | aaaaa |
| degree of esterification | aaaaa | aaaaa |
Login to View More
Abstract
The invention provides a photonasty polysiloxane compound and a protection film formed by the same; the photonasty polysiloxane compound can form a flattening film or an interlayer insulation film on a TFT substrate, or form a core material or wrapping material of a light waveguide; the protection film has hardly identified ITO patterns and is good in low temperature solidification; the photonasty polysiloxane compound comprises polysiloxane (A), Nitrogen naphthoquinone Permian sulfonic acid ester (B), at least one compound (C) selected from a group formed by hot acid generation agent or hot alkaline generation agent, inorganic particles (D) and a solvent (E).
Description
technical field [0001] The present invention provides a positive-type photosensitive siloxane suitable for planarizing films, interlayer insulating films, or core materials or cladding materials of optical waveguides used on TFT substrates such as liquid crystal display components and organic EL display components. A composition, a protective film formed therefrom, and a component having the protective film. Among them, especially the positive photosensitive polysiloxane composition can be used to manufacture a protective film which has the characteristics of hard ITO pattern recognition and good low-temperature curing formed after exposure and development. Background technique [0002] In recent years, in the field of liquid crystal display or organic electroluminescent display, in order to improve the clarity and resolution, it can generally be achieved by increasing the aperture ratio of the display device (as disclosed in Japanese Patent No. 2933879). By forming a prote...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/075G03F7/008
Inventor 吴明儒施俊安
Owner CHI MEI CORP
