Substrate processing apparatus and resist removing unit
A substrate processing device and stripping device technology, which is applied in the manufacture of electrical components, manipulators, semiconductors/solid-state devices, etc., can solve the problems of IPA diffusion, insufficient isolation of the liquid atmosphere, and diffusion of the liquid atmosphere, and achieve the effect of inhibiting diffusion
Inactive Publication Date: 2015-09-30
EBARA CORP
View PDF1 Cites 4 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
However, there is a concern that the atmosphere of the chemical liquid diffuses from the open portion
In addition, in the case of installing a wind barrier, there is also a concern that the isolation of the chemical liquid atmosphere is insufficient, and there may be cases where the chemical liquid atmosphere spreads instead.
[0006] In addition, it is not limited to resist stripping equipment, but also in etching equipment that removes protective layers, metal isolation layers, or oxide films, the same problem of diffusion of harmful chemical liquid atmospheres occurs due to different types of etching liquids.
In addition, in the so-called pre-wet treatment and cleaning treatment using IPA (Iso-Propyl Alcohol), there is also a problem of diffusion of volatilized IPA.
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0055] Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the drawings described below, the same or corresponding constituent elements are given the same reference numerals and redundant descriptions are omitted.
[0056] figure 1 It is a schematic plan view of the substrate processing apparatus which concerns on one Embodiment of this invention.
[0057] Such as figure 1 As shown, the substrate processing apparatus 250 is provided with: four cassettes 30a, 30b, 30c, 30d for accommodating substrates such as semiconductor wafers; two substrate dryers 31a, 31b for drying the processed substrates; Mounting units 40a, 40b for loading and unloading substrates from the substrate holder; and two robots 32a, 32b for transferring substrates between these units. In addition, two substrate dryers may be arranged vertically at positions where the substrate dryers 31 a and 31 b are arranged, so that four substrate dryers may be arrange...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
A substrate processing apparatus capable of inhibiting diffusion of a chemical solution atmosphere around a processing bath. The substrate processing apparatus has a processing bath for storing a substrate holder holding a substrate and for processing the substrate, a lifter configured to support the substrate holder, store the substrate holder in the processing bath, and take out the substrate holder from the processing bath, and a cover configured to cover the periphery of the substrate holder taken out from the processing bath by the lifter.
Description
technical field [0001] The present invention relates to a substrate processing apparatus and a resist stripping apparatus for processing substrates such as semiconductor wafers. Background technique [0002] Conventionally, wiring is formed in minute wiring grooves, holes, or resist openings provided on the surface of semiconductor wafers, etc., or bumps (protruding electrodes) that are electrically connected to package electrodes and the like are formed on the surface of semiconductor wafers, etc. . As a method of forming the wiring and bumps, for example, plating, vapor deposition, printing, ball bumping, and the like are known. With the increase in the number of I / Os and the finer pitch of semiconductor wafers in recent years, electroplating methods that can achieve miniaturization and have relatively stable performance are being used more and more. [0003] In the step of forming wiring in the resist opening by the electric field plating method, after the wiring is for...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/67
CPCH01L21/67276H01L21/67034H01L21/67057H01L21/67173H01L21/68742H01L21/68721B25J11/0095
Inventor 小林贤一关本雅彦横山俊夫赤泽贤一仓科敬一三谷隆
Owner EBARA CORP