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Method for manufacturing semiconductor device

A technology of semiconductors and devices, applied in the field of back-illuminated image sensors and their formation

Active Publication Date: 2020-06-26
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, while existing BSI CMOS image sensors are generally adequate for their intended purpose, not all aspects are completely satisfactory

Method used

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  • Method for manufacturing semiconductor device
  • Method for manufacturing semiconductor device
  • Method for manufacturing semiconductor device

Examples

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Embodiment Construction

[0035] The following disclosure provides many different embodiments or examples for implementing different features of the presented subject matter. Specific examples of components or configurations are described below to simplify the present invention. Of course, these are merely examples and not intended to be limiting. For example, in the description below, forming a first feature on or over a second feature may include embodiments in which the first feature and the second feature are formed in direct contact, and may also include embodiments in which the first feature and the second feature may be formed in direct contact. The part forms an embodiment of an accessory part such that the first part and the second part may not be in direct contact. Furthermore, the present invention may repeat reference numerals and / or letters in various instances. These repetitions are for simplicity and clarity and do not in themselves indicate a relationship between the various embodimen...

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Abstract

The invention provides a semiconductor device for sensing incident light, and the semiconductor device includes a substrate, a device layer, a semiconductor layer and a color filter layer. A device layer is disposed on the substrate and includes a photosensitive region. The semiconductor layer overlies the device layer and has a first surface and a second surface opposite the first surface. The first surface is adjacent to the device layer. The semiconductor layer includes microstructures on the second surface. The color filter layer is disposed on the second surface of the semiconductor layer. The invention also proposes a method for manufacturing the semiconductor device.

Description

[0001] related application [0002] This application claims priority to US Provisional Application No. 61 / 971,445, filed March 27, 2014, the entire contents of which are hereby incorporated by reference. technical field [0003] The present invention generally relates to the field of semiconductors, and more particularly, to back-illuminated image sensors and methods of forming the same. Background technique [0004] Semiconductor image sensors are used to sense light. Generally, semiconductor image sensors include complementary metal oxide semiconductor (CMOS) image sensors (CIS) and charge-coupled device (CCD) sensors, which are widely used in various applications, such as digital still cameras (DSC), mobile phone cameras, digital video cameras (DV) and digital video recorder (DVR) applications. These semiconductor image sensors utilize arrays of image sensor elements, each of which includes photodiodes and other elements to absorb light and convert the sensed light into...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/146H01L21/822
CPCH01L27/14683H01L27/14621H01L27/14625H01L27/14645H01L27/14685H01L27/14689
Inventor 杜建男叶玉隆林杏芝黄建彰陈世雄
Owner TAIWAN SEMICON MFG CO LTD