Gallium nitride-based low-leakage current solid-supported beam field-effect transistor inverter and its preparation method

Abstract

The invention relates to a GaN-based low-leakage current fixed-beam field-effect transistor inverter and a preparation method thereof. The GaN-based low-leakage current fixed-beam MESFET inverter consists of a fixed-beam N-type MESFET and a fixed-beam P type MESFET configuration. The MESFET of the inverter is fabricated on a semi-insulating GaN substrate, and a fixed beam structure is designed above the gate. An electrode plate is designed under the fixed support beam. The pull-down voltage of the fixed beam is designed to be equal to the absolute value of the threshold voltage of the MESFET. When the voltage between the fixed beam and the electrode plate is less than the absolute value of the threshold voltage, the fixed beam is suspended above the grid. At this time, the grid is open and the MESFET is not turned on. When the voltage between the beam and the electrode plate reaches or exceeds the absolute value of the threshold voltage, the fixed beam will be pulled down to stick to the grid, and the grid and the fixed beam are short-circuited, thereby turning on the MESFET. The invention increases the impedance of the gate during operation, reduces the leakage current of the gate, and effectively reduces power consumption.

Description

technical field [0001] The invention provides a GaN-based low-leakage current solid-supported beam MESFET inverter, which belongs to the technical field of micro-electromechanical systems. Background technique [0002] With the development of microelectronics and microwave communication technology, the requirements for the performance of radio frequency integrated circuits are getting higher and higher at home and abroad, and people also put forward higher requirements for the speed and power consumption of devices. Metal-semiconductor field-effect transistors (MESFETs) have the advantages of high electron mobility, fast carrier drift, large band gap, strong radiation resistance, and wide operating temperature range, and are widely used in optical fiber communications, mobile communications, Ultra-high-speed computers, high-speed measuring instruments, aerospace and other fields. With the continuous reduction of device feature size, especially after entering the deep submic...

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Problems solved by technology

Excessive power consumption will also make various mobile portable devices have to face problems such as power supply life and heat dissipation

Therefore, the high power consumption of integrated circuits puts forward higher requirements on the heat dissipation performance and stability of the equipment, and the battery life of various mobile and portable equipment is also increasingly challenged.

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