A sapphire substrate submerged chemical mechanical polishing method

A chemical mechanical and sapphire technology, applied in the direction of grinding machine tools, grinding devices, metal processing equipment, etc., can solve the problems of sapphire substrate sheet inlay, polishing pad degumming, bubbling, etc., to improve the polishing effect, reduce the number of scratches, avoid The effect of micro-scratches

Active Publication Date: 2017-10-27
TUNGHSU GRP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, sapphire substrates are mainly processed by chemical mechanical polishing. However, the traditional processing method has the following problems: the polishing pad is directly exposed to the air during processing, and the surface is only covered with a thin layer of polishing liquid, and the surface temperature of the polishing pad will decrease. As the polishing time increases, it will increase, resulting in degumming and bubbling of the polishing pad, causing the sapphire substrate to be embedded in the adsorption pad, shortening the service life of the polishing pad and the adsorption pad, and in serious cases directly causing the adsorption pad and the polishing pad. , all sapphire substrates are scrapped; at the same time, the sapphire substrate is placed horizontally, and the micro particles generated during the polishing process adhere to the surface of the polishing pad and are not easy to fall off. The micro particles will cause micro scratches on the surface of the sapphire substrate and affect the surface polishing of the sapphire substrate. quality

Method used

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  • A sapphire substrate submerged chemical mechanical polishing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] A immersed chemical mechanical polishing method for a sapphire substrate sheet, the polishing method is as follows:

[0025] (1) Pretreatment

[0026] ①100 pieces of 2-inch sapphire substrates cleaned after copper polishing are attached to the hard ceramic disk with adsorption pads, 25 pieces of each hard ceramic disk are attached, and then the hard ceramic disk with the sapphire substrate is attached Soak in reverse osmosis pure water for 15 minutes. At this time, check whether there are bubbles and particles under the sapphire substrate. The hard ceramic disc 1 of the sapphire substrate must be attached;

[0027] ② Mount the hard ceramic disc 1 with the sapphire substrate on the main shaft 2 of the polishing machine, and fix it with the buckle 3, and place the polishing pad on the rotating chassis 6;

[0028] ③Mix reverse osmosis pure water and silica polishing liquid to obtain a mixed liquid. The volume ratio of reverse osmosis pure water to silica polishing liquid is 5:2. T...

Embodiment 2

[0036] A immersed chemical mechanical polishing method for a sapphire substrate sheet, the polishing method is as follows:

[0037] (1) Pretreatment

[0038] ① 28 pieces of 4-inch sapphire substrates cleaned after copper polishing are attached to the hard ceramic discs with adsorption pads, each hard ceramic disc is attached to 7 pieces, and then the hard ceramic discs with sapphire substrates are attached Soak in reverse osmosis pure water for 15 minutes. At this time, check whether there are bubbles and particles under the sapphire substrate. The hard ceramic disc 1 of the sapphire substrate must be attached;

[0039] ② Mount the hard ceramic disc 1 with the sapphire substrate on the main shaft 2 of the polishing machine, and fix it with the buckle 3, and place the polishing pad on the rotating chassis 6;

[0040] ③Mix reverse osmosis pure water and silica polishing liquid to obtain a mixed liquid. The volume ratio of reverse osmosis pure water to silica polishing liquid is 5:2. The...

Embodiment 3

[0048] A immersed chemical mechanical polishing method for a sapphire substrate sheet, the polishing method is as follows:

[0049] (1) Pretreatment

[0050] ①The 72 pieces of 55 X 55 square sapphire substrates that were cleaned after copper polishing were attached to the hard ceramic discs with adsorption pads. Each hard ceramic disc was attached to 18 pieces, and then the hard sapphire substrates were attached. The ceramic disc is soaked in reverse osmosis pure water for 15 minutes. At this time, check whether there are bubbles and particles under the sapphire substrate, and the hard ceramic disc 1 with the sapphire substrate should be attached;

[0051] ② Mount the hard ceramic disc 1 with the sapphire substrate on the main shaft 2 of the polishing machine, and fix it with the buckle 3, and place the polishing pad on the rotating chassis 6;

[0052] ③Mix reverse osmosis pure water and silica polishing liquid to obtain a mixed liquid. The volume ratio of reverse osmosis pure water t...

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Abstract

The present invention relates to a sapphire substrate submerged chemical mechanical polishing method. The polishing method is as follows: (1) Pretreatment: attach the sapphire substrate to a hard ceramic disk and install it on the main shaft of the polishing machine; install the polishing pad on the On the rotating chassis; mix reverse osmosis pure water and silica polishing liquid into the polishing machine, and keep the liquid level between the upper limit liquid level line of the polishing liquid and the lower limit liquid level line of the polishing liquid; (2) Polishing: start the polishing machine, Carry out the polishing of sapphire substrate, the polishing processing time is 40-80min, and the polished sapphire substrate is obtained; (3) the finished sapphire substrate is obtained after cleaning; , The adsorption pad has a long service life, and at the same time, it is a chemical mechanical polishing method with no micro scratches on the surface of the sapphire substrate during the polishing process.

Description

Technical field [0001] The invention relates to an immersion type chemical mechanical polishing method for a sapphire substrate sheet, belonging to the field of chemical mechanical polishing processing technology for a sapphire substrate sheet. Background technique [0002] Sapphire single crystal material has the characteristics of high hardness, high melting point, good light transmission, excellent electrical insulation, and stable chemical properties. It is widely used as the epitaxial substrate material of semiconductor gallium nitride (GaN) light-emitting diodes. [0003] In order to prepare high-quality epitaxial films and improve luminous efficiency, the sapphire substrate must be precision polished. At present, sapphire substrates are mainly processed by chemical mechanical polishing methods. However, the traditional processing methods have the following problems: the polishing pad is directly exposed to the air during the processing, and the surface is only covered by a t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B24B37/00B24B1/00
CPCB24B1/00B24B37/00
Inventor 秦光临吴明山王禄宝
Owner TUNGHSU GRP
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