Growth method of low stress silicon nitride film
A silicon nitride film and low-stress technology, which is applied in the manufacture of electrical components, semiconductor/solid-state devices, circuits, etc., can solve the problems of limited stress reduction effect, small adjustable temperature range, and inapplicability to large-scale production, and achieve stress The effects of obvious reduction, small damage and low production temperature
Active Publication Date: 2018-01-05
苏州工业园区纳米产业技术研究院有限公司
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Problems solved by technology
In the LPCVD system, the high process temperature will cause great damage to the equipment and high energy consumption. By increasing the reaction temperature to prepare a low-stress film, the adjustable temperature range is small, and the stress reduction effect is limited. Therefore, the temperature is used to adjust the stress in practical applications. The method is not suitable for large-scale production
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[0015] Attached below figure 1 attached figure 2 And specific examples, the specific embodiment of the present invention is described in further detail, the following examples are used to illustrate the present invention, but are not used to limit the scope of the present invention.
[0016] In this specific embodiment, three factors and three levels of orthogonal experiments are used to select the process conditions that have the greatest influence on the stress of the silicon nitride film. Select silicon nitride deposition temperature (Temp), DCS:NH in this specific embodiment 3 Volume ratio (Gas Ratio) and reaction pressure (Press) are used as three factors, among which the three levels of Temp are 750°C, 780°C and 800°C, the three levels of Gas Ratio are 0.25, 4 and 6, and the three levels of Press The three levels are 150mT, 200mT and 250mT in turn. The items investigated are the stress (Film Stress) / MPa of the silicon nitride film, the uniformity (THK Nu) / % of the sil...
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The invention relates to a growth method of a low-stress silicon nitride film. The method includes the step of plasma enhanced chemical vapor deposition, including: (1) providing a semiconductor substrate in a reaction chamber; (2) adjusting the deposition temperature in the reaction chamber and adjusting the reaction pressure in the reaction chamber, the reaction temperature being 750-800 DEG C, and the reaction pressure being 150-250mT; and (3) introducing reaction gas DCS and NH3 into the reaction chamber the volume ratio of which is 6-0.8, and forming a silicon nitride film on the semiconductor substrate through deposition. The silicon nitride film obtained from the method has stress lower than 1GPa and greater than 150MPa, and also meets structural demands of MEMS products. According to the method, the film production temperature is low, a furnace tube for low-pressure chemical vapor deposition (LPCVD) is less damaged and causes less energy consumption, and stress reducing effects are obvious. Therefore, the method is suitable for mass production.
Description
technical field [0001] The invention relates to the preparation of a semiconductor film material, in particular to a method for growing a low-stress silicon nitride film, which belongs to the field of semiconductor device processing. Background technique [0002] Silicon nitride thin films have many excellent properties, such as for mobile ions (Na + ) has strong barrier ability, compact structure, small pinhole density, hydrophobicity, good chemical stability, and large dielectric constant. It is a film widely used in the fields of semiconductors, microelectronics and microelectromechanical systems (MEMS). Material. When the silicon nitride film is used in the field of MEMS processing, its film stress is very important in the surface micromachining technology. Excessive stress will lead to warping and fracture of the MEMS structure. [0003] The processing technology of the existing silicon nitride film mainly adjusts the deposition temperature and DCS (dichlorosilane) / NH...
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IPC IPC(8): H01L21/02
CPCH01L21/02126
Inventor 石家燕
Owner 苏州工业园区纳米产业技术研究院有限公司