Method and device for manufacturing 3D cryptographic chip resisting fault injection attacks

A technology of error injection attack and encryption chip, which is applied in the security field of 3D encryption chip, and can solve the problems that 3D encryption chip has weak ability to resist error injection attack and does not consider security.

Active Publication Date: 2016-01-06
SHENZHEN INST OF ADVANCED TECH
View PDF5 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Embodiments of the present invention provide a method and device for manufacturing a 3D cryptographic chip resistant to error injection attacks, to solve the problem that the current 3D cryptog

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method and device for manufacturing 3D cryptographic chip resisting fault injection attacks
  • Method and device for manufacturing 3D cryptographic chip resisting fault injection attacks
  • Method and device for manufacturing 3D cryptographic chip resisting fault injection attacks

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0103] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0104] Such as figure 1 As shown, the embodiment of the present invention provides a method for manufacturing a 3D cryptographic chip resistant to error injection attacks, including:

[0105] Step 101: Determine the sensitive logic unit in the cryptographic circuit according to the error injection attack method corresponding to the cryptographic algorithm adopted by the cryptographic circuit.

[0106] Step 102: Divide the encryption circuit into 3D layers, di...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a method and a device for manufacturing a 3D cryptographic chip resisting fault injection attacks, and relates to the technical field of safety of the 3D cryptographic chip. The method comprises the following steps of: determining a sensitive logical unit in a cryptographic circuit according to a fault injection attack method corresponding to a cryptographic algorithm used for the cryptographic circuit; layering the cryptographic circuit in a 3D mode, dividing the sensitive logical unit into a middle layer of the 3D layers, and generating a 3D cryptographic circuit subjected to 3D layering; determining liable-to-overturn region type of the region, where the sensitive logical unit is, in the 3D cryptographic circuit according to charged particle mobility under the influence of TSV (Through Silicone Vias) and STI (Sallow Trench Isolation) in the 3D cryptographic circuit; respectively inserting corresponding sensors at locations of the sensitive logical units a PMOS liable-to-overturn region, a NMOS liable-to-overturn region or a random overturn region, and completing safety manufacturing of the 3D cryptographic chip. The method and the device provided by the invention solve the problem of poor resistivity of the current 3D cryptographic chip to the fault injection attacks.

Description

technical field [0001] The invention relates to the technical field of security of 3D cryptographic chips, in particular to a method and device for manufacturing a 3D cryptographic chip resistant to error injection attacks. Background technique [0002] At present, with the development of Through Silicon Vias (TSV) technology, the TSV technology is changing the interconnection lines of integrated circuits from planar to three-dimensional (3D), forming a three-dimensional interconnection structure. The space utilization of the three-dimensional interconnection structure is better than that of the planar structure, which essentially reduces the length of the interconnection line, shortens the delay and power consumption of the interconnection line, and thus reduces the delay and power consumption of the entire circuit. Cryptographic chips are a very important branch of the integrated circuit industry, and are widely used in occasions where sensitive information needs to be kep...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H04L9/00H04L29/06
Inventor 邵翠萍李慧云徐国卿
Owner SHENZHEN INST OF ADVANCED TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products