Manufacturing method for semiconductor

Abstract

The invention provides a manufacturing method for a semiconductor. The manufacturing method comprises the steps of providing a semiconductor substrate, and coating photoresist on the surface of the semiconductor substrate; exposing and developing for patterning the photoresist; and hard baking, wherein the temperature for hard baking ranges from 125 to 135 DEG C. According to the method, for products with thicker photoresist and deeper icon implantation depth, the hard baking process provided by the invention is adopted for better effectively removing a developing solution, water vapor and organic foreign matters hidden in the side wall and the bottom of the photoresist so as to avoid overflowing of the developing solution, the water vapor and the organic foreign matters to result in decrease of the vacuum degree of a cavity in the implantation step, so as to improve ion implantation quality, and the electrical properties and the yield of wafers.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for manufacturing a semiconductor device. Background technique [0002] The chip manufacturing process generally includes dozens of photolithography process steps. The photolithography process is used to define circuit graphics and provide defined graphics for the next etching or ion implantation. Therefore, the photolithography process is the most important in the chip manufacturing process. links. Each photolithography step includes multiple sub-steps, among which the more critical sub-steps include: coating photoresist, exposure, development, and hardbake. The exposure step is to use the photolithography plate to transmit part of the light beam, irradiate it on the photoresist, and react with the photoresist to form a photoacid, thereby defining a preliminary pattern. Next, the development step is to spray the developer onto the surface of the wafer (wafer) t...

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Problems solved by technology

[0003] It is found in production that for high-voltage device products, the energy of ion implantation is relatively large, the depth of implantation into the silicon substrate is relatively deep, and the thickness of the corresponding photoresist is relatively thick (in order to prevent ions from entering the non-implanted area), so the development of the wafer surface The organic impurities in the liquid, water vapor or photoresist are not easy to remove. As a resul

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