Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Optical material, optical film, and light-emitting device

A technology of optical materials and optical films, applied in the field of optical devices, can solve the problems of decreased oxygen barrier performance, increased particle size, insufficient transparency and durability, etc., and achieves the effect of excellent transparency

Inactive Publication Date: 2016-01-20
KONICA MINOLTA INC
View PDF17 Cites 19 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, in the above-mentioned prior art, the oxygen barrier performance can be obtained by using silica and glass-coated semiconductor nanoparticles, but the particle size is increased due to the formation of silica aggregates of semiconductor nanoparticles, and the resin Insufficient in transparency and durability due to the decrease of dispersibility in the medium and decrease of transparency, or decrease of brightness due to decrease of oxygen barrier performance due to the influence of external environment

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Optical material, optical film, and light-emitting device
  • Optical material, optical film, and light-emitting device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0165] Hereinafter, although an Example demonstrates this invention more concretely, this invention is not limited to a following Example.

[0166] "Synthesis of Semiconductor Nanoparticles A"

[0167] Put 0.1mmol of indium myristate, 0.1mmol of stearic acid, 0.1mmol of trimethylsilylphosphine, 0.1mmol of dodecyl mercaptan, 0.1mmol of zinc undecylenate and 8ml of octadecene into a three-neck flask , heating at 300° C. for 1 hour while refluxing in a nitrogen atmosphere, and InP / ZnS (semiconductor nanoparticles A) were obtained. In this specification, as a method of expressing a quantum dot having a shell, when the core is InP and the shell is ZnS, it is expressed as InP / ZnS.

[0168] By directly observing the particle A with a transmission electron microscope, InP / ZnS semiconductor nanoparticles having a core-shell structure having a structure in which the surface of the InP core is covered with a ZnS shell can be confirmed. In addition, from this observation, it was confirm...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
sizeaaaaaaaaaa
strengthaaaaaaaaaa
particle diameteraaaaaaaaaa
Login to View More

Abstract

The problem to be solved by the present invention is to provide an optical material having exceptional transparency and providing durability capable of suppressing the deterioration of semiconductor nanoparticles by oxygen and the like over an extended period of time. The optical material is characterized in containing at least one compound from among polysilazanes and modified polysilazanes, and semiconductor nanoparticles.

Description

technical field [0001] The invention relates to an optical material, an optical film and a light emitting device. In particular, it relates to an optical material, an optical film, and an optical device including the optical film having durability capable of suppressing deterioration of semiconductor nanoparticles caused by oxygen or the like over a long period of time and having excellent transparency. Background technique [0002] In recent years, semiconductor nanoparticles (quantum dots) have attracted commercial attention due to their size-tunable electronic properties. The use of semiconductor nanoparticles in a wide range of fields such as biomarkers, solar power generation, catalysis, biophotography, light emitting diodes (Light Emitting Diode; LED), general space lighting, and electroluminescent displays is expected. [0003] For example, in an optical device using semiconductor nanoparticles, a technology has been proposed to increase the amount of light entering ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/08C09K11/00C09K11/02G02B1/04
CPCC09K11/02C09K11/08C09K11/703C09K11/88G02B1/04
Inventor 江连秀敏
Owner KONICA MINOLTA INC
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com