Semiconductor structure and manufacturing method thereof
A semiconductor and regional technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, transistors, etc., can solve the problems of sensitivity and maintenance of precursors and growth conditions
Active Publication Date: 2018-07-27
TAIWAN SEMICON MFG CO LTD
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- Description
- Claims
- Application Information
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Problems solved by technology
However, the incorporation of Ge into SiGe films is limited by the epitaxial process
SiGe films with very high Ge concentrations are difficult to achieve using conventional epitaxy methods because they are extremely sensitive to surface preparation, precursors used and growth conditions
Challenges exist in utilizing epitaxial growth to meet increasing Ge concentration requirements and maintaining proper control over the SiGe distribution of SiGe source / drain (S / D) in PMOS
Method used
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[0035] The following disclosure provides many different embodiments, or examples, for implementing different features of the inventive subject matter. Specific examples of components or configurations are described below to simplify the present invention. Of course, these are merely examples and not intended to be limiting. For example, in the following description, forming a first part over or on a second part may include embodiments in which the first part and the second part are formed in direct contact, and may also include embodiments where the first part and the second part are formed in direct contact. An embodiment wherein an additional part is formed therebetween such that the first part and the second part are not in direct contact. Furthermore, the present invention may repeat reference numerals and / or letters in various instances. These repetitions are for simplicity and clarity and do not in themselves indicate a relationship between the various embodiments and / ...
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Abstract
Some embodiments of the present invention provide a semiconductor structure including a substrate and a regrown region. The substrate is made of a first material having a first lattice constant, and the regrown region is made of the first material and a second material, having a different lattice constant than the first lattice constant. The regrowth region is located partially in the substrate. The regrowth region has a "tip depth" measured vertically from at the surface of the substrate to the apex of the widest point of the regrowth region, and the tip depth is less than 10 nm. The regrown region also includes a top layer made substantially of the first material, and the top layer substantially has a first lattice constant. The invention also provides a method for fabricating a semiconductor structure.
Description
technical field [0001] The present invention generally relates to the field of semiconductors, and more particularly, to a source / drain strained transistor structure and a manufacturing method thereof. Background technique [0002] Semiconductor processing is often used in the manufacture of integrated circuits, which in particular require stringent quality requirements. Various methods are used in the semiconductor manufacturing industry to deposit materials on surfaces. One of the most widely used methods is chemical vapor deposition (CVD), in which atoms or molecules contained in a vapor are deposited on a surface to form a film. CVD allows the growth of films (including "epitaxial" films composed of materials comprising crystalline silicon) on the device surface area. [0003] Strained epitaxial materials are generally desired. "Strain" can affect the electrical properties of semiconductor materials such as silicon, carbon-doped silicon, germanium, and silicon-germani...
Claims
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IPC IPC(8): H01L27/092H01L21/8238
CPCH01L21/8238H01L27/092H01L29/7834H01L29/0847H01L29/165H01L21/30604H01L29/7848H01L29/66636H01L21/30608H01L21/02532H01L21/0245H01L21/02505H01L21/0243H01L21/02639H01L21/0262
Inventor 光心君余宗兴许义明李俊毅刘佳雯
Owner TAIWAN SEMICON MFG CO LTD