Surge protection method and circuit, IGBT (Insulated Gate Bipolar Translator) circuit and heater

A surge protection and surge technology, applied in emergency protection circuit devices, emergency protection circuit devices for limiting overcurrent/overvoltage, circuit devices, etc., can solve the problem of excessive protection time affecting cooking, heating effect, Failure to effectively protect the IGBT, difficult to control the protection duration and other problems, to overcome the difficult to control the protection duration, easy to control the protection duration, and avoid frequent shutdowns.

Active Publication Date: 2016-02-03
GREE ELECTRIC APPLIANCES INC
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this protection method often fails to effectively protect the IGBT because the protection time is too short; or the protection time is too long to affect the cooking and heating effects, and at the same time, the interference signal of the power grid makes the surge protection circuit fail to protect (generally, the protection stops for about 1S). Frequent downtime
[0005] In the existing technology, there are defects such as difficult to control the protection duration, weak anti-interference ability and poor user experience

Method used

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  • Surge protection method and circuit, IGBT (Insulated Gate Bipolar Translator) circuit and heater
  • Surge protection method and circuit, IGBT (Insulated Gate Bipolar Translator) circuit and heater
  • Surge protection method and circuit, IGBT (Insulated Gate Bipolar Translator) circuit and heater

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Embodiment Construction

[0038] In order to make the purpose, technical solution and advantages of the present invention clearer, the technical solution of the present invention will be clearly and completely described below in conjunction with specific embodiments of the present invention and corresponding drawings. Apparently, the described embodiments are only some of the embodiments of the present invention, but not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0039] According to an embodiment of the present invention, a surge protection method is provided, such as figure 1 A flowchart illustrating an embodiment of the method of the present invention is shown. The method includes at least:

[0040] At step S110, real-time detection of the CE pole voltage on one side of the IGBT to be protected, and performing surge pr...

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Abstract

The invention discloses a surge protection method and circuit, an IGBT (Insulated Gate Bipolar Translator) circuit and a heater. The method comprises steps of timely detecting CE pole voltage at one side of a to-be-protected IGBT, and instantly performing surge protection of the IGBT when a surge occurs; and based on surge protection of the IGBT, timely detecting CE pole voltage at the other side of the IGBT, and performing surge protection of the IGBT again when surge energy is not fully released and/or the CE pole voltage at the other side of the IGBT does not drop to a preset safety state, and timely ending surge protection of the IGBT when surge energy is fully released and the CE pole voltage at the other side of the IGBT drops to the preset safety state. The scheme provided by the invention can overcome defects that the protection time is hard to control, the anti-interference capability is weak, the user experience is poor and the like in the prior art, and achieves the beneficial effects of easy-to-control protection time, strong anti-interference capability and good user experience.

Description

technical field [0001] The invention relates to the technical field of power electronics, in particular to a surge protection method and circuit, an IGBT circuit and a heater. Background technique [0002] IGBT (Insulated Gate Bipolar Transistor, Insulated Gate Bipolar Transistor) is a composite fully-controlled voltage-driven power semiconductor device composed of a bipolar transistor BJT and an insulated gate field effect transistor MOS, and has the high performance of a metal oxide half field effect transistor MOSFET. The advantages of both the input impedance and the low turn-on voltage drop of the power transistor GTR. [0003] At present, IH (Indirect Heating, indirect heating, side heating) rice cookers, induction cookers, etc., are equipped with surge protection circuits to prevent surge voltage from damaging devices such as IGBTs. After the surge protection circuit turns off the IGBT, the surge energy has not been fully released in a short time; at this time, the v...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H02M1/08H03K17/08H02H9/04
Inventor 陈和辉龚辉平柳晓松
Owner GREE ELECTRIC APPLIANCES INC
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