Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Polishing slurry filtering device

A filtering device and polishing liquid technology, applied in the field of electrochemical polishing, can solve problems such as poor consistency of silicon wafers

Active Publication Date: 2016-02-10
ACM RES SHANGHAI
View PDF9 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition to the particle content in the polishing liquid, the viscosity of the polishing liquid is also one of the important parameters of the polishing liquid. If the viscosity of the polishing liquid is unstable, it will cause poor consistency between silicon wafers.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Polishing slurry filtering device
  • Polishing slurry filtering device
  • Polishing slurry filtering device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0015] In order to describe the technical content, structural features, goals and effects of the present invention in detail, the following will be described in detail in conjunction with the embodiments and drawings.

[0016] refer to figure 1 As shown, a schematic structural diagram of the polishing liquid filtering device according to the first embodiment of the present invention is disclosed. The polishing liquid filtering device includes a liquid storage barrel 101, which stores the original polishing liquid or recovered polishing liquid. The liquid storage barrel 101 is connected to the liquid inlet end of the first valve 102, the liquid outlet end of the first valve 102 is connected to the liquid inlet end of the pump 103, the liquid outlet end of the pump 103 is connected to the liquid inlet end of the filter 104, and the filter The liquid outlet of 104 is connected to the liquid inlet of the particle detector 105 , the liquid outlet of the particle detector 105 is co...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a polishing slurry filtering device. The polishing slurry filtering device comprises a slurry storage barrel, a first valve, a pump, a filter, a particle detector and a third valve, wherein the slurry storage barrel is used for storing original polishing slurry or recovered polishing slurry; a slurry inlet end of the first valve is connected with the slurry storage barrel; a slurry inlet end of the pump is connected with a slurry outlet end of the first valve; a slurry inlet end of the filter is connected with a slurry outlet end of the pump; a slurry inlet end of the particle detector is connected with a slurry outlet end of the filter; a slurry inlet end of the third valve is connected with a slurry outlet end of the particle detector, and a slurry outlet end of the third valve is connected with the slurry storage barrel. Polishing slurry is filtered repeatedly by the device, the content of particles in the polishing slurry filtered by the filter is detected by the particle detector, and the content of the particles in the polishing slurry can be guaranteed to be smaller than or equal to a preset value.

Description

technical field [0001] The invention relates to the technical field of electrochemical polishing, in particular to a polishing liquid filtering device. Background technique [0002] With the rapid development of semiconductor manufacturing technology, the continuous reduction of process feature size and the continuous improvement of integration, some traditional processes are facing challenges. For example, the chemical mechanical polishing process used for global planarization of silicon wafers, when the feature size of semiconductor devices is reduced to a certain extent, the chemical mechanical polishing process is no longer applicable due to its inherent characteristics. In addition to continuously improving the existing technology, people are also looking for new technology to replace the existing technology. [0003] In order to overcome the defects of the chemical mechanical polishing process in the processing of ultra-fine feature size semiconductor devices, the ele...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): B24B57/00
Inventor 肖东风贾照伟王坚王晖
Owner ACM RES SHANGHAI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products