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Semiconductor structure and manufacturing method thereof

A semiconductor and main body technology, applied in semiconductor/solid-state device manufacturing, transistors, electrical components, etc., can solve problems such as increasing complexity

Active Publication Date: 2019-09-27
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This scaling down process also increases the complexity of processing and manufacturing ICs, and in order to achieve these advances, similar developments in IC processing and manufacturing are required

Method used

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  • Semiconductor structure and manufacturing method thereof
  • Semiconductor structure and manufacturing method thereof
  • Semiconductor structure and manufacturing method thereof

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Embodiment Construction

[0035] The following disclosure provides many different embodiments or examples for implementing different features of the invention. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, these are examples only and are not intended to limit the invention. For example, in the following description, forming a first component over or on a second component may include an embodiment in which the first component and the second component are formed in direct contact, and may also include an embodiment in which the first component and the second component are formed in direct contact. An embodiment in which an additional component may be formed between such that the first component and the second component may not be in direct contact. In addition, the present invention may repeat reference numerals and / or characters in various instances. This repetition is for the sake of simplicity and clarity and does not in itself in...

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Abstract

The present disclosure provide a semiconductor structure, including a substrate having a top surface; a gate over the substrate, the gate including a footing region in proximity to the top surface, the footing region including a footing length laterally measured at a height under 10 nm above the top surface; and a spacer surrounding a sidewall of the gate, including a spacer width laterally measured at a height of from about 10 nm to about 200 nm above the top surface. The footing length is measured, along the top surface, from an end of a widest portion of the footing region to a vertical line extended from an interface between a gate body and the spacer, and the spacer width is substantially equal to or greater than the footing length.

Description

technical field [0001] The present invention relates to semiconductor structures and methods of fabrication thereof. Background technique [0002] The semiconductor integrated circuit (IC) industry has experienced rapid development. In the course of IC evolution, functional density (ie, the number of interconnected devices per chip area) has generally increased while geometry size (ie, the smallest component (or line) that can be created using a fabrication process) has decreased. Typically this scaling down process provides benefits by increasing production efficiency and reducing associated costs. This scaling down process also increases the complexity of processing and manufacturing ICs, and similar developments in IC processing and manufacturing are required in order to achieve these advances. As transistor dimensions decrease, gate oxide thickness must be reduced to maintain performance at reduced gate lengths. However, to reduce gate leakage, high-k (high-k) gate in...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/092H01L21/8238
Inventor 张哲豪程潼文陈建颖张国辉张哲诚林木沧
Owner TAIWAN SEMICON MFG CO LTD