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A new ferroelectric-semiconductor pn junction type tandem solar cell

A technology of stacked solar and pn junction, applied in the field of solar cells and solar energy, can solve the problems of small short-circuit current and so on

Active Publication Date: 2017-10-27
MIANYANG TEACHERS COLLEGE
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0013] The purpose of the present invention is to provide a solution to the problem that the open-circuit voltage of a traditional (pn) junction solar cell is limited by the band gap of the material and will reach the limit, while the short-circuit current (photovoltaic current) of a ferroelectric photovoltaic cell is relatively small. Ferroelectric-semiconductor pn junction type new tandem solar cell

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  • A new ferroelectric-semiconductor pn junction type tandem solar cell
  • A new ferroelectric-semiconductor pn junction type tandem solar cell
  • A new ferroelectric-semiconductor pn junction type tandem solar cell

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Embodiment

[0062] The stacked solar cell in the embodiment of the present invention includes a metal electrode, a substrate pn junction, an inorganic ferroelectric material layer, and a transparent oxide electrode, and the metal electrode, the substrate pn junction, the inorganic ferroelectric material layer, and the transparent oxide electrode are connected in sequence , the substrate pn junction is located between the metal electrode and the inorganic ferroelectric material layer, and the inorganic ferroelectric material layer is located between the substrate pn junction and the transparent oxide electrode. Wherein, the substrate pn junction is located above the metal electrode, the inorganic ferroelectric material layer is located above the substrate pn junction, and the transparent oxide electrode is located above the inorganic ferroelectric material layer. Meanwhile, in some embodiments of the present invention, a transition layer is also provided between the substrate pn junction an...

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Abstract

The invention discloses a new ferroelectric-semiconductor pn junction type stacked solar cell, aiming to solve the problem that the open circuit voltage of the traditional (pn) junction type solar cell is limited by the band gap of the material and will reach the limit, while the ferroelectric photovoltaic cell The problem of small short-circuit current (photovoltaic current). The laminated solar cell includes metal electrodes, a substrate pn junction, an inorganic ferroelectric material layer, and a second electrode. The invention can overcome the defects existing in the existing traditional (pn) junction solar cells and ferroelectric photovoltaic cells, learn from each other, organically combine the two, and provide a new ferroelectric-semiconductor pn junction type laminated solar cell. The solar cell of the present invention can not only increase the photovoltaic voltage (open circuit voltage) of the solar cell, but also increase the photovoltaic current (short circuit current) of the solar cell, greatly improve the efficiency of the solar cell, and has significant progress significance.

Description

technical field [0001] The invention relates to the field of solar energy, in particular to the field of solar cells, in particular to a novel ferroelectric-semiconductor pn junction type laminated solar cell. The invention can effectively improve the photovoltaic voltage and photovoltaic current of the solar cell, effectively improve the photoelectric conversion efficiency of the solar cell, and has good application prospects. Background technique [0002] Since the 20th century, industrial development and excessive exploitation of energy have triggered a global energy crisis. According to the "BP World Energy Statistical Yearbook" statistics (June 2011), according to the current human energy exploitation speed and proven reserves, global oil can only be exploited by human beings for 46.2 years, natural gas can be exploited for 58.6 years, and coal can only be exploited by human beings. It has been mined for 118 years. In other words, decades later, mankind will face a hu...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0687H01L31/032
CPCY02E10/544
Inventor 李雪冬王雪敏彭丽萍熊政伟吴卫东唐永建
Owner MIANYANG TEACHERS COLLEGE