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Light-emitting diode and method of making the same

A manufacturing method and gallium polarity technology, applied in electrical components, circuits, semiconductor devices, etc., can solve problems such as poor stability of chip voltage reliability, and achieve the effect of solving the problem of ohmic contact stability and ensuring voltage reliability.

Active Publication Date: 2017-10-24
QUANZHOU SANAN SEMICON TECH CO LTD
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  • Description
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AI Technical Summary

Problems solved by technology

[0004] In view of the above problems, the present invention provides a vertical light-emitting diode with good n-type ohmic contact and its manufacturing method, to overcome the problem of chip voltage reliability caused by the poor stability of the n-face GaN ohmic contact electrode existing in the existing vertical chip

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  • Light-emitting diode and method of making the same
  • Light-emitting diode and method of making the same
  • Light-emitting diode and method of making the same

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Embodiment Construction

[0022] The present invention will be further described below in conjunction with the accompanying drawings and preferred specific embodiments. In specific device design and manufacture, the LED structure proposed by the present invention can be modified within a certain range in part of the structure and size according to the needs of the application field and process implementation, and the selection of materials can be flexible.

[0023] figure 1 It is a schematic cross-sectional view of an LED epitaxial structure for a vertical structure implemented according to the present invention.

[0024] see figure 1 , an LED epitaxial structure, including from bottom to top: substrate 1, u-type nitride layer 2, n-type nitride layer 3, n-type recovery layer 4, n-type superlattice structure layer 5, active layer 6. A p-type nitride layer 7 and a p-type contact layer 8 .

[0025] Among them, the preferred sapphire for the substrate 1 has a planar surface structure. The upper surface...

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Abstract

A light-emitting diode (LED) chip includes from bottom to up: a conductive substrate, a p-type nitride layer, an active layer, an n-type recovery layer, an n-type nitride layer and an n electrode, wherein, the n-type nitride layer has a nitride polarity crystal and a gallium polarity crystal, and the surfaces of the nitride polarity and the gallium polarity regions appear different in height, the n-type recovery layer surface approximate to the n-type nitride layer has consistent mixed polarity with the n-type nitride layer, and the surface far from the n-type nitride layer is a connected gallium polarity surface.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a vertical light-emitting diode with good n-type ohmic contact and a manufacturing method thereof. Background technique [0002] In recent years, with the maturity of substrate transfer technology, vertical structure chip technology has been more and more used in the industry. It generally deposits GaN-based thin films on sapphire substrates by MOCVD, and then deposits GaN-based thin films through wafer bonding technology. Or electroplating technology to bond to the semiconductor or metal substrate, and then peel off the sapphire substrate. This technology effectively improves the luminous efficiency of GaN-based LED chips due to its high light extraction efficiency, current expansion capability and thermal conductivity, especially in the field of high current density and high power applications. [0003] However, in the aforementioned vertical structure chip technology, the surfac...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/32H01L33/00
CPCH01L33/16H01L33/0075H01L33/12H01L33/32H01L33/325
Inventor 张洁朱学亮杜成孝刘建明徐宸科
Owner QUANZHOU SANAN SEMICON TECH CO LTD
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