A method and device for determining the content of aluminum components in an inalsb film

A measurement method and a technology of a measurement device, which are applied in the field of testing and testing, can solve problems such as the inability to conveniently, quickly and accurately measure the content of aluminum components in InAlSb thin films, and achieve the effects of improving test efficiency, high precision, and accurate test results

Active Publication Date: 2019-03-22
11TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP
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Problems solved by technology

[0005] The invention provides a method and device for determining the content of aluminum components in indium aluminum antimony InAlSb thin films, which solves the problem in the prior art that the content of aluminum components in InAlSb thin films cannot be measured conveniently, quickly and accurately

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  • A method and device for determining the content of aluminum components in an inalsb film
  • A method and device for determining the content of aluminum components in an inalsb film
  • A method and device for determining the content of aluminum components in an inalsb film

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[0022] Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. Although exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited by the embodiments set forth herein. Rather, these embodiments are provided for more thorough understanding of the present disclosure and to fully convey the scope of the present disclosure to those skilled in the art.

[0023] In order to solve the problem that the aluminum component content in the InAlSb thin film cannot be measured conveniently, quickly and accurately in the prior art, the present invention provides a method and device for determining the aluminum component content in the InAlSb thin film. For example, the present invention will be described in further detail. It should be understood that the specific embodiments described here ...

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Abstract

The invention discloses a method and device for measuring the aluminum component content in an InAlSb film. The method includes the following specific steps that the InAlSb film is grown on an InSb substrate, the angle theta <InAlSb measurement>, generated when the InAlSb film meets the Bragg equation, of the incident angle of X-ray is measured; the theta <InAlSb measurement> is corrected, and theta <InAlSb correction> is obtained; the lattice constant a < InAlSb > of the InAlSb film is obtained according to the theta <InAlSb correction>; the aluminum component content in the InAlSb film is obtained according to the lattice constant a <InSb> of InSn, the lattice constant a <AlSb> of AlSb and the a <InAlSb>. By means of the method and device, on the premise that a sample is not damaged, the aluminum component content in the InAlSb film can be measured conveniently and rapidly, and the test result is precise.

Description

technical field [0001] The invention relates to the technical field of testing and testing, in particular to a method and device for measuring the content of aluminum components in an indium-aluminum-antimony InAlSb thin film. Background technique [0002] Epitaxial InAlSb thin films on InSb substrates can prepare infrared detector devices that can work at temperatures higher than liquid nitrogen. The content of the aluminum component in the InAlSb thin film is an important indicator for the preparation of this device. When the aluminum component is too low, it has little effect on the bandgap width of the semiconductor, and cannot achieve the purpose of high-temperature work; when the aluminum component is too high, the Too many dislocations will be introduced, which will greatly reduce the performance of the detector device. [0003] To control the content of the aluminum component, it must first be tested and characterized. The commonly used methods for testing material...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N23/207
CPCG01N23/207
Inventor 周朋刘铭折伟林邢伟荣尚林涛
Owner 11TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP
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