Non-packaged LED flashing light, driving chip thereof, and manufacturing method

A technology for driving chips and flashing lights, which is applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of increased leakage current of driving chips, and achieve the effect of solving the increase of leakage current

Active Publication Date: 2016-05-04
FOUNDER MICROELECTRONICS INT
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Aiming at the defects in the prior art, the present invention provides an unpackaged LED flashing light driver chip, a manufacturing method of an unpackaged LED flashing light driving chip and an unpackaged LED flashing light, which can not only not affect the appearance and brightness of the terminal product, but also Can effectively solve the problem of increased leakage current of the driver chip caused by light

Method used

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  • Non-packaged LED flashing light, driving chip thereof, and manufacturing method
  • Non-packaged LED flashing light, driving chip thereof, and manufacturing method
  • Non-packaged LED flashing light, driving chip thereof, and manufacturing method

Examples

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no. 1 example

[0034] image 3 It shows a schematic flow chart of the manufacturing method of the driving chip of the unpackaged LED flashlight provided by the first embodiment of the present invention, as shown in figure 1 As shown, the manufacturing method of the driver chip of the unpackaged LED flashlight of this embodiment is as follows.

[0035] 301. Provide a substrate on which a P-type well, an N-type metal oxide semiconductor NMOS source and drain, a P-type metal oxide semiconductor PMOS source and drain, lead holes, and metal leads are sequentially formed.

[0036] It can be understood that the method of sequentially forming a P-type well, NMOS source and drain, PMOS source and drain, lead holes, and metal leads in this step is the same as figure 1 The corresponding steps in the shown prior art are the same, and the details thereof will not be repeated here.

[0037] 302. Form a protective layer including a light-shielding metal layer on the substrate.

[0038] Preferably, the m...

no. 2 example

[0057] Figure 4 It shows a schematic flow diagram of the manufacturing method of the driving chip of the unpackaged LED flash lamp provided by the second embodiment of the present invention, as shown in Figure 4 As shown, the manufacturing method of the driver chip of the unpackaged LED flashlight of this embodiment is as follows.

[0058] 401. Provide a substrate on which a P-type well, an NMOS source and drain, a PMOS source and drain, a lead hole, and a metal lead are sequentially formed.

[0059] It can be understood that the method of sequentially forming a P-type well, NMOS source and drain, PMOS source and drain, lead holes, and metal leads in this step is the same as figure 1 The corresponding steps in the shown prior art are the same, and the details thereof will not be repeated here.

[0060] 402. Form a protective film on the substrate.

[0061] 403. Form a light-shielding metal layer film on the protective film.

[0062] In specific applications, this step ca...

no. 3 example

[0074] The driver chip for an unpackaged LED flashlight provided by the third embodiment of the present invention includes: a P-type well, an NMOS source and drain, a PMOS source and drain, lead holes, metal leads and a protective layer, and the protective layer includes a light-shielding metal layer.

[0075] Preferably, the material of the light-shielding metal layer in this embodiment may be aluminum, but this embodiment does not limit it, it is only for illustration and can be selected according to actual needs.

[0076] The driver chip of the non-encapsulated LED flashing lamp of the present embodiment adds a layer of light-shielding metal layer on the protective layer of the driver chip in the prior art. Due to the reflective effect of the metal, after adding the light-shielding metal layer, both can not It affects the appearance and brightness of the terminal product, and can effectively solve the problem of increased leakage current of the driver chip caused by light. ...

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Abstract

The invention provides a non-packaged LED flashing light driving chip, a manufacturing method of the non-packaged LED flashing light driving chip, and a non-packaged LED flashing light. The method includes: providing a substrate forming a P-type well, NMOS source/drain, PMOS source/drain, leading wire holes, and metal leading wires; and forming a protection layer including a shading metal layer on the substrate. According to the non-packaged LED flashing light driving chip manufactured by employing the above method, the appearance and the brightness of the end product are not influenced, and the problem of increased leakage current of the driving chip due to illumination can be effectively solved.

Description

technical field [0001] The invention relates to the technical field of semiconductor chip manufacturing technology, in particular to an unpackaged LED flashing light driver chip, a manufacturing method of the unpackaged LED flashing light driving chip, and an unpackaged LED flashing light. Background technique [0002] At present, there is a kind of light-emitting diode (Lighting Emitting Diode, referred to as LED) flashing light products in which several LED lights and driving chips are packaged together in transparent epoxy resin, and there is no opaque resin package outside the driving chip of such products. [0003] The manufacturing method of the driver chip of this type of product, such as figure 1 As shown, the manufacturing method of the driving chip of the unpackaged LED flashlight in the prior art includes: P-type well manufacturing; N-type metal oxide semiconductor (NegativechannelMetalOxideSemiconductor, NMOS) source and drain manufacturing; P-type metal oxide se...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/58
Inventor 李如东谭志辉宋秀海冶晓飞
Owner FOUNDER MICROELECTRONICS INT
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