Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Data preservation method and electrically erasable programmable read-only memory

A technology of read-only memory and storage method, which is applied in the computer field, can solve the problems of long data consumption, etc., and achieve the effect of time-saving backup and extended reliability

Active Publication Date: 2018-07-20
SEMICON MFG INT (SHANGHAI) CORP
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The main purpose of the present invention is to provide a data storage method and EEPROM, to at least solve the backup method in the prior art to erase and write the target address first, and then rewrite the data of the backup address takes a long time The problem

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Data preservation method and electrically erasable programmable read-only memory
  • Data preservation method and electrically erasable programmable read-only memory
  • Data preservation method and electrically erasable programmable read-only memory

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] This embodiment provides a method for saving data, combining image 3 with Figure 4 As shown, the method includes:

[0022] Step S101, preset the first address and the second address of two mutual backup addresses in the EEPROM, the first address and the second address respectively correspond to a data area, and the data in the two data areas They are mutual backup data, and the data state of at least one data area in the two data areas is the data valid state. In any erase cycle, the working state of the data area corresponding to each address is the programming working state or the erasing working state. state.

[0023] Specifically, combine Figure 4 As shown, the above-mentioned first address can be A address, and the above-mentioned second address can be B address, and the above-mentioned A address and B address respectively correspond to two data areas in the EEPROM, and the above-mentioned electrically erasable programmable read-only memory EEPROM first sets ...

Embodiment 2

[0054] The embodiment of the present invention also provides an electrically erasable programmable read-only memory, which combines image 3 with Figure 4 As shown, the EEPROM can include:

[0055] The two data areas of the first address and the second address are mutual backups. The data in the above two data areas are mutually backup data, and at least one of the data areas in the two data areas is in a valid data state. In any erase / write cycle, the working state of the data area corresponding to each address is the programming working state or the erasing working state.

[0056] Specifically, combine Figure 4 As shown, the above-mentioned first address can be A address, and the above-mentioned second address can be B address, and the above-mentioned A address and B address respectively correspond to two data areas in the EEPROM, and the above-mentioned electrically erasable programmable read-only memory EEPROM first sets The address A is programmed, the data is writte...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a data storage method and an electrically erasable programmable read-only memory. The method comprises the following steps: presetting a first address and a second address in the EEPROM (Electrically Erasable Programmable Read-Only Memory), wherein the first address and the second address are mutual backup addresses, the first address and the second address independently correspond to one data area, data in the two data areas is mutual backup data, the data state of at least one data area in the two data areas is a data effective state, and the working state of the data area corresponding to each address is a working state or an erasing working state in any erasing period. The method solves the problems of long time consumption and large resource waste of a data storage process since the data area corresponding to the target address is firstly erased and the erasing process which is the same with the data area corresponding to the target address is carried out in the data area corresponding to the backup address in a data storage process in the prior art.

Description

technical field [0001] The invention relates to the field of computers, in particular to a data storage method and an electrically erasable programmable read-only memory. Background technique [0002] The data storage operation of EEPROM provided by the prior art in one erasing and writing cycle can include two parts: erasing first and then programming. Both erasing and programming are aimed at the data corresponding to the same address. The content in the EEPROM area is operated, and during the save operation process of the data area corresponding to the address, the process of the data state in the EEPROM is as follows: figure 1 . Such as figure 1 As shown, in an erasing and writing cycle completed for the data area corresponding to the current address, before entering the erasing working state, the data state of the data area corresponding to the address is the data valid state, indicating that the data area corresponding to the current address Save data, after enterin...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G06F11/14G06F12/02
Inventor 周世聪
Owner SEMICON MFG INT (SHANGHAI) CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com