Cavity forming method, thermopile infrared detector and manufacturing method thereof
A technology of an infrared detector and a manufacturing method, which is applied in the field of infrared detectors and achieves the effect of a simple forming method
Active Publication Date: 2017-12-22
HANGZHOU SILAN INTEGRATED CIRCUIT
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Problems solved by technology
Although the above-mentioned technologies have demonstrated the methods of preparing cavities and forming suspended membrane structures, the cost of the manufacturing process and the improvement of compatibility performance need to be further explored for more effective technical solutions
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[0063] The cavity forming method, the thermopile infrared detector and the manufacturing method thereof proposed by the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments. Advantages and features of the present invention will be apparent from the following description and claims. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.
[0064] According to an aspect of the present invention, a cavity forming method is provided, such as figure 1 shown, including:
[0065] Step S11: providing a P-type doped silicon substrate;
[0066] Step S12: forming an N well in the silicon substrate, the N well having a ring structure;
[0067] Step S13: forming an N-type doped grid structure in the silicon substrate surrounded by the N well, and the ed...
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Abstract
The invention provides a cavity formation method, a thermopile infrared detector and a manufacture method. The cavity formation method comprises steps of forming N traps in a silicon substrate, forming an N type doped grid structure in the silicon substrate surrounded by the N trap, performing electrochemical corrosion to form a porous silicon layer, and enabling the porous silicon layer to perform reconstruction through the epitaxial technology to form a sealed cavity. The invention does not need the long-time wet etching or dry etching to form a cavity, the formation of the cavity is before the metal deposition, and the corrosion of the metal during the regular cavity formation process where the wet etching is utilized to corrode the silicon substrate does not exist. Besides, the cavity formation is simple, can be compatible with the regular CMOS technology and is applicable to the batch production.
Description
technical field [0001] The invention relates to an infrared detector, in particular to a cavity forming method, a thermopile infrared detector and a manufacturing method thereof. Background technique [0002] The thermopile infrared detector is one of the earliest researched and practical infrared imaging devices. As an uncooled infrared detector, it has the advantages of small size, light weight, no need for refrigeration, and high sensitivity. It is widely used in security monitoring, There are a wide range of applications in medical treatment, life detection and consumer products, and their development is more rapid. [0003] The working principle of the thermopile detector is based on the Seebeck effect: if two different materials or objects A and B with the same material and different work functions are connected at the hot junction, and there is a temperature difference △T between the hot junction and the cold zone, then An open-circuit potential difference △V will be...
Claims
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IPC IPC(8): H01L31/09G01J5/12H01L31/18
CPCG01J5/12H01L31/09H01L31/1804Y02P70/50
Inventor 孙福河闻永祥季锋刘琛陈雪平孙伟
Owner HANGZHOU SILAN INTEGRATED CIRCUIT