Isoplanar field oxidation isolation structure and forming method thereof

A technology of isolation structure and field oxidation, which is applied in the manufacturing of electrical components, circuits, semiconductor/solid-state devices, etc., can solve the problems of increasing process costs and high equipment requirements, and achieves a simple formation method, keeps the area unchanged, and prevents lateral oxidation. Effect

Active Publication Date: 2014-06-11
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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Problems solved by technology

However, the shallow trench isolation process has higher requirements on equipment, which increases the process cost

Method used

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  • Isoplanar field oxidation isolation structure and forming method thereof
  • Isoplanar field oxidation isolation structure and forming method thereof
  • Isoplanar field oxidation isolation structure and forming method thereof

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Embodiment Construction

[0025] Hereinafter, the present invention is described by means of specific embodiments shown in the drawings. It should be understood, however, that these descriptions are exemplary only and are not intended to limit the scope of the present invention. Also, in the following description, descriptions of well-known structures and techniques are omitted to avoid unnecessarily obscuring the concept of the present invention.

[0026] A schematic diagram of a layer structure according to an embodiment of the invention is shown in the drawing. The figures are not drawn to scale, with certain details exaggerated and possibly omitted for clarity. The shapes of the various regions and layers shown in the figure, as well as their relative sizes and positional relationships are only exemplary, and may deviate due to manufacturing tolerances or technical limitations in practice, and those skilled in the art will Regions / layers with different shapes, sizes, and relative positions can be...

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Abstract

Provided are an isoplanar field oxidation isolation structure and a forming method thereof. The method comprises the steps of providing a substrate, forming a silicon oxide layer on the substrate, forming a first silicon nitride layer on the silicon oxide layer, carrying out patterning, forming slots in preset areas to expose the substrate, removing the substrate parts in the slots to form grooves, forming silicon nitride side walls on the inner walls of the grooves, growing field oxide layers in the grooves, enabling the surfaces of the field oxide layers to be flushed with the surface of the substrate outside the grooves, and removing the first silicon nitride layer and the silicon oxide layer outside the grooves. According to the forming method of the isoplanar field oxidation isolation structure, the isoplanar field oxidation isolation structure can be obtained, meanwhile, the silicon nitride side walls are formed on the inner walls of the grooves, transverse peroxidation can be prevented, and the area of an active area is maintained the same.

Description

technical field [0001] The invention relates to the technical field of ultra-deep submicron semiconductor devices, in particular to an equal-plane field oxidation isolation structure and a forming method thereof. Background technique [0002] Nowadays, tens of thousands of semiconductor devices are integrated in a semiconductor integrated circuit. In order to avoid mutual influence between the devices, it is usually necessary to form isolation between the devices. [0003] The traditional isolation method is local field oxidation isolation (LOCOS). In the traditional LOCOS formation method, a silicon nitride layer is first grown on the surface of the silicon substrate, and the silicon nitride layer in the field area is removed by photolithography and etching to form an opening to expose the silicon substrate. A field oxide layer is formed on the bottom, and then the silicon nitride layer on the surface of the silicon substrate is removed, thereby forming an active region (d...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/762
CPCH01L21/76224
Inventor 许高博徐秋霞
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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