A preparation method of single-layer nano-thin film memristor with LTCC green ceramic tape as substrate

A technology of nano-film and green ceramic tape, which is applied in the direction of nanotechnology, nanotechnology, nanotechnology, etc. for information processing, and can solve the problems of memristor materials being hard, commercial production not yet realized, and hardware experiments unable to be carried out.

Active Publication Date: 2018-02-06
SHANDONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Most of them adopt the switch model and working mechanism similar to HP memristors, and the manufacturing process is complicated and the cost is high. It is not general and universal for the study of memristor characteristics, memristor circuit theory, and electronic circuit design.
[0006] (2) Commercial production has not yet been realized
[0007] It is difficult for most researchers to obtain a real memristor element, so many researchers cannot carry out hardware experiments in the real physical sense due to the lack of memristor elements when studying memristors and memristor circuits. Rely on simulation or simulated circuits for experimental research
However, the memristor simulation model and the analog circuit are far from the actual memristor characteristics, and the hardware implementation using the analog circuit is more concerned with simulating the memristor mathematical model and ignoring the essential physical characteristics of the memristor
[0008] (3) The preparation of physical memristors that have been reported requires high requirements and harsh conditions in terms of raw material selection and preparation process methods, and it is difficult for laboratories or scientific research units with ordinary conditions to complete the preparation of related physical memristor components.
[0015] 2. The preparation process is complicated, the preparation cycle is long, and the energy consumption is high:
[0017] 3. The material of the prepared memristor is hard and brittle, which is easy to be broken or damaged due to collision, and is not convenient for transportation
[0018] In addition, it also has the problems and deficiencies of relatively harsh process conditions and low product rate.

Method used

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  • A preparation method of single-layer nano-thin film memristor with LTCC green ceramic tape as substrate
  • A preparation method of single-layer nano-thin film memristor with LTCC green ceramic tape as substrate

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preparation example Construction

[0109] Adopt the same preparation method of single-layer nanometer film memristor, adopt pulsed laser deposition PLD or magnetron sputtering method to use Au, Ag, Pt to plate electrode, this preparation method comprises the following steps:

[0110] Step 1, with Ba(Ti 1-y x y )O 3-y(X=Mg, Zn, Ca) is used as the target material, and the pulsed laser deposition PLD or magnetron sputtering method is used to coat the LTCC raw ceramic tape with the lower electrode Pt or Au in advance to form a resistive layer. The thickness of the coating is 10-990nm, then heat-treated at 700-900°C for 10-30 minutes;

[0111] In the second step, the target material is Au, Ag or Pt, using pulsed laser method or magnetron sputtering method, in Ba(Ti 1-y x y )O 3-y A layer of upper electrode is plated on the nano film.

[0112] 3, embodiment 13 adopts and embodiment 1 Ba(Ti 1-y x y )O 3-y The raw material formula of the target is the same; moreover, a layer of upper electrode is plated with I...

Embodiment 1

[0119] Preparation of Ba(Ti 1-y x y )O 3-y The raw material formula of the target is: Ba(NO 3 ) 2 : Ti(OC 4 h 9 ) 4 : X(NO 3 ) 2 =100:99:1 (molar ratio).

Embodiment 2

[0121] Preparation of Ba(Ti 1-y x y )O 3-y The raw material formula of the target is: Ba(NO 3 ) 2 : Ti(OC 4 h 9 ) 4 : X(NO 3 ) 2 =100:98:2 (molar ratio).

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Abstract

The invention discloses a method for preparing a single-layer nanometer film memristor with LTCC raw ceramic tape as a substrate, which uses holes and ionized oxygen ions generated by the single-layer nanometer film memristor under bias voltage as current carriers According to the principle of changing the resistance of the device by relying on the changes in the generation of holes and ionized oxygen ions, we start from two aspects: simplifying the process and improving the raw material formula of the resistive film: omitting the pre-sintering step of the resistive film ceramic material, Select ceramic raw materials with a lower sintering temperature, combined with a lower calcination temperature; and replace Ti4+ with X2+ to partially replace Ti4+ to increase the asymmetry of the molecular structure of the resistive film and the amount of holes inside; and adopt A series of technical means such as coating on the LTCC raw ceramic tape to form a "flexible" lower electrode simplifies the preparation process, improves production efficiency, reduces production energy consumption and manufacturing costs, and greatly improves the memristor performance of the memristor.

Description

technical field [0001] The invention relates to a method for preparing a single-layer nanometer thin film memristor, in particular to a method for preparing a single layer nanometer thin film memristor with an LTCC raw ceramic tape as a substrate; it belongs to the application of micro-nano electronic devices and nonlinear circuits field. Background technique [0002] Memristor (memristor) is the fourth passive circuit component after resistors, capacitors and inductors entered the mainstream electronics field, and it is a passive circuit component related to magnetic flux and charge. As early as 1971, Leon Chua, the pioneer of international nonlinear circuit and cellular neural network theory, theoretically predicted the existence of memristor based on the logical integrity of circuit theory. In 2008, Hewlett-Packard Labs built a memristor prototype device experimentally for the first time, which confirmed Leon Chua's theory about memristors and attracted worldwide attenti...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00G11C13/00C23C14/35B82Y10/00
CPCG11C13/00G11C13/0002C23C14/35B82Y10/00H10N70/00
Inventor 窦刚郭梅李玉霞孙钊李煜于洋
Owner SHANDONG UNIV OF SCI & TECH
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