Preparation method of single-layer resistance variable film memristor

Abstract

The present invention discloses a preparation method of a single-layer resistance variable film memristor. By applying the holes and the ionized oxygen ions generated by a single-layer nanometer thinfilm memristor under a bias voltage as the current carriers, depending on the principle that the quantity variation of the holes and the ionized oxygen ions realizes the resistance variation of a device and starting at the two aspects of the preparation technology simplification and the chemical formulation of the resistance variable film nano-ceramic materials on the basis of the conventional technology, and by the series of technical means of saving a pre-sintering step of the resistance variable film nano-ceramic materials, selecting the raw materials having the higher metal cation valenceand the lower nano-ceramic sintering temperature, combining a lower calcination temperature to control the incomplete sintering to thereby greatly increase the internal lattice defects and the holes,etc., a preparation technology is simplified, the technology flow is shortened, the production efficiency is improved, and the production energy consumption and the production and manufacturing costsare reduced, at the same time, the performance and the yield of the memristor are improved simultaneously and greatly.

Description

[0001] This application is a divisional application with the application number 201510998321.X, the application date of December 25, 2015, and the title of the invention "a method for preparing a single-layer nano-resistive variable film memristor". technical field [0002] The invention relates to a method for preparing a memristor, in particular to a method for preparing a memristor with a single-layer nano resistive variable film; it belongs to the field of nonlinear circuit applications. Background technique [0003] Memristors, also known as memristors, are the fourth passive circuit element after resistors, capacitors, and inductors. Due to its non-volatile, synaptic function and nanoscale structure, it is widely used in high-density non-volatile memory, artificial neural network, large-scale integrated circuit, reconfigurable logic and programmable logic, bioengineering, pattern recognition, signal Processing and other fields have great application prospects. And it ...

AI Technical Summary

Problems solved by technology

[0006] (1) In recent years, new memristor materials and memristor systems have been continuously reported, but there are still few physically realized memristor models, and they are relatively single, and there is no unified universal model to describe the behavior of memristors

[0007] Most of the physical memristors reported in recent years are proposed for certain types of applications or for simulating certain functions (such as high-density non-volatile memory, Crossbar Latch technology, and simulated synapses). The similar switch model and working mechanism, and the manufacturing process is complicated and the cost is high, which is not general and universal for the study of memristor characteristics, memristor circuit theory, and electronic circuit design.

[0008] (2) Commercial production has not yet been realized

[0009] It is difficult for most researchers to obtain a real memristor element, so many researchers cannot carry out hardware experiments in the real physical sense because of the lack of memristor elements when studying memristors and memristor circuits. Rely on simulation or simulated circuits for experimental research

However, the memristor simulation model and the analog circuit are far from the actual memristor characteristics, and the hardware implementation using the analog circuit is more concerned with simulating the memristor mathematical model and ignoring the essential physical characteristics of the memristor

[0010] (3) The preparation of physical memristors that have been reported requires high requirements and harsh conditions in raw material selection and preparation process methods, and it is difficult for laboratories or scientific research units with ordinary conditions to complete the preparation of related physical memristor components

[0017] 2. The preparation process is complicated, the preparation cycle is long, and the energy consumption is high:

[0019] In addition, it also has the problems and deficiencies of relatively harsh process conditions and low product rate.

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