A nanoscale monolayer bi (1‑x) ca x feo 3‑x/2 Preparation method of resistive film memristor

A memristor, nano-scale technology, applied in the preparation of memristor, based on the preparation field of nano-scale single-layer BiCaxFeO3-x/2 resistive film memristor, can solve the problem of long preparation period, complex preparation process, memory There are few resistor models, etc., to achieve the effects of easy physical realization, simple preparation process, and low control difficulty

Active Publication Date: 2018-02-06
SHANDONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] (1) In recent years, new memristor materials and memristor systems have been continuously reported, but there are still few physically realized memristor models, and they are relatively single, and there is no unified universal model to describe the behavior of memristors
[0006] Most of the physical memristors reported in recent years are proposed for certain types of applications or for simulating certain functions (such as high-density non-volatile memory, Crossbar Latch technology, and simulated synapses). The similar switch model and working mechanism, and the manufacturing process is complicated and the cost is high. It is not general and universal for the study of memristor characteristics, memristor circuit theory and electronic circuit design.
[0007] (2) Commercial production has not yet been realized
[0008] It is difficult for most researchers to obtain a real memristor element, so many researchers cannot carry out hardware experiments in the real physical sense due to the lack of memristor elements when studying memristors and memristor circuits. Rely on simulation or simulated circuits for experimental research
However, the memristor simulation model and the analog circuit are far from the actual memristor characteristics, and the hardware implementation using the analog circuit is more concerned with simulating the memristor mathematical model and ignoring the essential physical characteristics of the memristor
[0009] (3) The preparation of physical memristors that have been reported requires high requirements and harsh conditions in terms of raw material selection and preparation process methods, and it is difficult for laboratories or scientific research units with ordinary conditions to complete the preparation of related physical memristor components.
[0016] 2. The preparation process is complicated, the preparation cycle is long, and the energy consumption is high:
[0018] In addition, it also has the problems and deficiencies of relatively harsh process conditions and low product rate.

Method used

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  • A nanoscale monolayer bi <sub>(1‑x)</sub> ca <sub>x</sub> feo <sub>3‑x/2</sub> Preparation method of resistive film memristor
  • A nanoscale monolayer bi <sub>(1‑x)</sub> ca <sub>x</sub> feo <sub>3‑x/2</sub> Preparation method of resistive film memristor
  • A nanoscale monolayer bi <sub>(1‑x)</sub> ca <sub>x</sub> feo <sub>3‑x/2</sub> Preparation method of resistive film memristor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0095] The preparation method of memristor all comprises the following steps:

[0096] The first step, prepare Bi (1-x) Ca x FeO 3-x / 2 target, the specific steps are as follows:

[0097] (1), raw material mixing:

[0098] Bi(NO 3 ) 3 ·5H 2 o 3 : Ca(NO 3 ) 2 4H 2 o 3 : Fe(NO 3 ) 3 9H 2 o 3 =99:1:100 (molar ratio) mixed;

[0099] Dissolve the above mixture in 10%-20% dilute nitric acid, place it on a magnetic stirrer, and stir to make it completely dissolve;

[0100] (2), powder preparation

[0101] Slowly add NaOH solution dropwise to the above solution until the precipitation is complete, filter the precipitate and wash it with deionized water, add NaOH solution dropwise and adjust the pH value, put it into a reaction kettle, and put it in a constant temperature drying box that has reached a predetermined temperature of 200°C in advance , hydrothermal reaction for 24 hours;

[0102] After the hydrothermal reaction, the reactor was naturally cooled to room te...

Embodiment 2

[0115] In addition to preparing Bi (1-x) Ca x FeO 3-x / 2 The raw material formula of the target is:

[0116] Bi(NO 3 ) 3 ·5H 2 o 3 : Ca(NO 3 ) 2 4H 2 o 3 : Fe(NO 3 ) 3 9H 2 o 3 =98: 2: 100 (molar ratio) and each parameter in the following table 1;

[0117] All the other are the same as in Example 1.

Embodiment 3

[0119] In addition to preparing Bi (1-x) Ca x FeO 3-x / 2 The raw material formula of the target is:

[0120] Bi(NO 3 ) 3 ·5H 2 o 3 : Ca(NO 3 ) 2 4H 2 o 3 : Fe(NO 3 ) 3 9H 2 o 3 =97: 3: 100 (molar ratio) and each parameter in the following table 1;

[0121] All the other are the same as in Example 1.

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Abstract

The invention discloses a nano-scale monolayer Bi (1‑x) Ca x FeO 3‑x / 2 The preparation method of the resistive film memristor uses the holes and ionized oxygen ions generated by the resistive film under the bias voltage as carriers, and relies on the change of the generated amount to realize the principle of device resistance change. On the basis of existing technology, we start from two aspects: simplifying the process and improving the formula of the resistive film material: omitting the pre-sintering step of the resistive film ceramic material, and selecting raw materials with higher metal ion valence and lower ceramic sintering temperature, and using more low calcination temperature so that Ca 2+ Partial comparison 3+ Carry out A-site substitution to increase the internal lattice defects and holes of the resistive film, increase the asymmetry of the molecular structure of the resistive film layer and other technical means, simplify the preparation process, improve production efficiency, and reduce production energy consumption and production cost; at the same time, the memristor performance and yield of the memristor are greatly improved.

Description

technical field [0001] The invention relates to a method for preparing a memristor, in particular to a method based on nanoscale single-layer Bi (1-x) Ca x FeO 3-x / 2 The invention discloses a preparation method of a resistive variable film memristor; it belongs to the application field of nonlinear circuits. Background technique [0002] Memristors, also known as memristors, are the fourth passive circuit element after resistors, capacitors, and inductors. Due to its non-volatile, synaptic function and nanoscale structure, it is widely used in high-density non-volatile memory, artificial neural network, large-scale integrated circuit, reconfigurable logic and programmable logic, bioengineering, pattern recognition, signal Processing and other fields have great application prospects. And it is expected to pave the way for the development of non-volatile storage devices with unlimited storage precision and ultra-high storage density, artificial neural networks capable of a...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00C23C14/35B82Y10/00
CPCC23C14/35B82Y10/00H10N70/00
Inventor 李玉霞窦刚郭梅于洋李煜孙钊
Owner SHANDONG UNIV OF SCI & TECH
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