A kind of preparation method of single-layer nanometer resistive film memristor

Abstract

The invention discloses a preparation method of a single-layer nano-resistive film memristor, which uses the holes and ionized oxygen ions generated by the single-layer nano-film memristor under bias voltage as carriers, relying on the holes and ionization The principle of changing the resistance of the device by changing the amount of oxygen ions generated is based on the existing technology, starting from the simplification of the preparation process and the chemical formula of the resistive film nano-ceramic material. The sintering step, the selection of raw materials with higher valence of metal cations and lower sintering temperature of nano-ceramic, combined with lower calcination temperature to control it into an incomplete "sintering", thereby greatly increasing its internal lattice defects and voids. A series of technical means such as holes simplifies the preparation process, shortens the process flow, improves production efficiency, and reduces production energy consumption and manufacturing costs; at the same time, the memristor performance and yield of memristors are greatly improved.

Description

technical field [0001] The invention relates to a preparation method of a memristor, in particular to a preparation method of a single-layer nanometer resistive variable film memristor, and belongs to the field of nonlinear circuit application. Background technique [0002] Memristors, also known as memristors, are the fourth type of passive circuit element to appear after resistors, capacitors, and inductors. Due to its non-volatile, synaptic function and nanoscale structure, it is widely used in high-density non-volatile memory, artificial neural networks, large-scale integrated circuits, reconfigurable logic and programmable logic, bioengineering, pattern recognition, signal Processing and other fields have huge application prospects. And it is expected to pave the way for the manufacture of non-volatile memory devices with unlimited storage accuracy and ultra-high storage density, artificial neural networks that can adjust the synaptic weight of neurons, and analog comp...

AI Technical Summary

Problems solved by technology

[0005] (1) In recent years, new memristor materials and memristor systems have been continuously reported, but there are still few physically realized memristor models, and they are relatively single, and there is no unified universal model to describe the behavior of memristors

[0006] Most of the physical memristors reported in recent years are proposed for certain types of applications or for simulating certain functions (such as high-density non-volatile memory, Crossbar Latch technology, and simulated synapses). The similar switch model and working mechanism, and the manufacturing process is complicated and the cost is high. It is not general and universal for the study of memristor characteristics, memristor circuit theory and electronic circuit design.

[0007] (2) Commercial production has not yet been realized

[0008] It is difficult for most researchers to obtain a real memristor element, so many researchers cannot carry out hardware experiments in the real physical sense due to the lack of memristor elements when studying memristors and memristor circuits. Rely on simulation or simulated circuits for experimental research

However, the memristor simulation model and the analog circuit are far from the actual memristor characteristics, and the hardware implementation using the analog circuit is more concerned with simulating the memristor mathematical model and ignoring the essential physical characteristics of the memristor

[0009] (3) The preparation of physical memristors that have been reported requires high requirements and harsh conditions in terms of raw material selection and preparation process methods, and it is difficult for laboratories or scientific research units with ordinary conditions to complete the preparation of related physical memristor components.

[0016] 2. The preparation process is complicated, the preparation cycle is long, and the energy consumption is high:

[0018] In addition, it also has the problems and deficiencies of relatively harsh process conditions and low product rate.

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