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Method and apparatus for patterned wafer characterization

A wafer and characterization technology, used in instruments, measuring devices, scientific instruments, etc., can solve the problems of time-consuming, failure to provide subsurface defect structures, etc.

Active Publication Date: 2019-05-07
KLA CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This technique is time consuming (e.g. several hours) and judgments about raster quality can currently be somewhat subjective
CD-SEM measurements also failed to provide information on the subsurface defect structure

Method used

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  • Method and apparatus for patterned wafer characterization
  • Method and apparatus for patterned wafer characterization
  • Method and apparatus for patterned wafer characterization

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Embodiment Construction

[0028] In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. The present invention may be practiced without some or all of these specific details. In other instances, well known process operations have not been described in detail so as not to unnecessarily obscure the present invention. While the invention will be described in conjunction with specific embodiments, it will be understood that it is not intended to limit the invention to the described embodiments.

[0029] Introduction

[0030] Directed self-assembly (DSA) is currently being explored by many groups as a patterning technique for advanced nodes. Figures 1A to 1D To illustrate the DSA process utilizing the guiding pattern 122, the block copolymer material becomes more and more self-ordered onto the guiding pattern 122 during the annealing process. As shown, the block copolymer material 104a is initially relative to Figure ...

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Abstract

Apparatus and methods for characterizing a plurality of structures of interest on a semiconductor wafer are disclosed. Multiple spectral signals are measured from a particular structure of interest at multiple azimuthal angles from one or more sensors of the metrology system. Spectral difference values ​​are determined based on the spectral signals obtained for the azimuth angles. A quality indication for the particular structure of interest is determined and reported based on analyzing the spectral difference.

Description

[0001] Cross References to Related Applications [0002] This application asserts prior application U.S. Provisional Application No. 61 / 862,801 of Thaddeus Gerard Dziura et al., filed August 6, 2013, and To the right of U.S. Provisional Application No. 61 / 943,098 to Thaddeus Dziura et al., which is hereby incorporated by reference in its entirety for all purposes. technical field [0003] The present invention relates generally to methods and systems for semiconductor wafer characterization, and more particularly to the characterization of the quality of printed patterns on semiconductor wafers. Background technique [0004] Photolithography or optical lithography systems for use in the manufacture of integrated circuits have been popular for some time. Such systems have proven extremely effective in precisely manufacturing and forming the smallest details in products. In some photolithographic systems, the circuit image is written on the substrate by transferring the pat...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/027
CPCG01N21/9501G01N21/956G01N2201/12
Inventor 撒迪厄斯·吉拉德·奇乌拉史帝蓝·伊凡渥夫·潘戴夫亚历山大·库兹涅佐夫安德烈·V·舒杰葛洛夫
Owner KLA CORP
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