Preparation method of leadless antiferroelectric sodium niobate piezoelectric ceramic

A sodium niobate and voltage-electric technology is applied in the field of lead-free anti-ferroelectric ceramic grain control to achieve the effects of excellent ferroelectric performance, low price, and stable process control technology.

Inactive Publication Date: 2016-06-08
CHINA JILIANG UNIV
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AI Technical Summary

Problems solved by technology

The invention successfully solves the grain control problem of perovskite structure antiferroelectric piezoelectric ceramic sodium niobate

Method used

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  • Preparation method of leadless antiferroelectric sodium niobate piezoelectric ceramic
  • Preparation method of leadless antiferroelectric sodium niobate piezoelectric ceramic
  • Preparation method of leadless antiferroelectric sodium niobate piezoelectric ceramic

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Embodiment 1

[0030] According to the formula, the chemical formula is NaNbO 3 Weigh the raw materials, the molecular weight is 163.89, and the batching quality is 50.00 grams;

[0031] Weigh the required raw material Na 2 CO 3 Mass is 16.1998 grams, Nb 2 o 5 The mass is 40.7497 grams.

[0032] The preparation method is:

[0033] Weigh Na according to the stoichiometric ratio 2 CO 3 , Nb 2 o 5 After each powder raw material is placed in a ball mill jar, an appropriate amount of absolute alcohol is added as a solvent, and after 24 hours of planetary ball milling, it is at 100 o Dry in the drying box of C temperature for 18 hours, pulverize and pass through 80 mesh sieves, obtain the mixed powder of raw material;

[0034] The resulting mixed powder, after 700 o C, after 6 hours of low-temperature and long-term pre-synthesis, synthesize a mixed powder precursor of about 100 nanometers, such as figure 1 shown;

[0035] To the synthesized precursor powder, add 15wt% of the powder ma...

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Abstract

The invention relates to a preparation method of sodium niobate ceramic with a diamond-shaped crystal grain morphology, and belongs to the field of leadless antiferroelectric piezoelectric ceramic crystal grain regulation and control. The chemical formula of the sodium niobate ceramic is NaNbO3 (called NN for short), the crystal grain morphology of the ceramic has a diamond shape, and the crystal grain has gradient anisotropy. The preparation method comprises the following steps: carrying out ball milling to prepare mixed raw material powder, processing the mixed raw material powder through an appropriate technology to prepare a mixing precursor, and carrying out a solid phase reaction through appropriate technology regulation and control in order to prepare the antiferroelectric piezoelectric ceramic with uniform micrometer crystal grain size. The dimension effect of the crystal grain makes the ceramic have an excellent ferroelectric performance not antiferroelectric performance. The ceramic has a strong demonstration effect in the crystal grin regulation and control field, so the ceramic has bright prospect; and the high-performance leadless antiferroelectric sodium niobate ceramic prepared through the method has wide application values in high voltage ceramic energy storage capacitors and electro-mechanical energy transducers.

Description

technical field [0001] The invention relates to a preparation method of sodium niobate ceramics with rhombic crystal grain morphology, and belongs to the field of grain control of lead-free antiferroelectric piezoelectric ceramics. Background technique [0002] According to relevant literature research, passive components and active devices (semiconductor products such as integrated circuits) together constitute the core part of the circuit and are the basis of various electronic information products. In new electronic products, integrated circuits and passive components account for 46.1% and 9.1% of the total production cost of all electronic components and parts, but account for 12.7% and 55.1% of the total installation cost, and even some chips The management and installation costs of the traditional components have exceeded their price. It is not difficult to see that passive electronic components have become a bottleneck restricting the further development of the whole...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/495C04B35/626
CPCC04B35/495C04B35/62645C04B2235/3201C04B2235/78C04B2235/786C04B2235/96
Inventor 李正法
Owner CHINA JILIANG UNIV
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