Thin film transistor array panel and manufacturing method therefor
一种薄膜晶体管、阵列面板的技术，应用在薄膜晶体管阵列面板及其制作领域，能够解决成本高、制作工艺复杂、耗费光罩制程等问题，达到节省制作成本、简化制作工艺的效果
Active Publication Date: 2016-07-06
TCL CHINA STAR OPTOELECTRONICS TECH CO LTD
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Problems solved by technology
The production of the protective layer / passivation layer requires one of the photomask processes
[0004] Due to the need for six photomask manufacturing processes, the manufacturing process of the above-mentioned traditional thin film transistor array panel is more complicated and the cost is higher
Method used
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Embodiment Construction
[0022] The word "embodiment" as used in this specification means an example, instance or illustration. Furthermore, as used in this specification and the appended claims, the article "a" or "an" may generally be construed as "one or more" unless specified otherwise or clear from the context in the singular.
[0023] The thin film transistor array panel of the present invention can be applied to a display panel, and the display panel can be TFT-LCD (ThinFilmTransistorLiquidCrystalDisplay, thin film transistor liquid crystal display panel), OLED (OrganicLightEmittingDiode, organic light emitting diode display panel) and the like.
[0024] The thin film transistor array panel of the present invention may be an array panel used in the thin film transistor liquid crystal display panel, in this case, the second electrode part 504 in the electrode layer in the thin film transistor array panel may be strip-shaped Electrodes, the thin film transistor array panel is used to form the thi...
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The invention discloses a thin film transistor array panel and a manufacturing method therefor. The thin film transistor array panel comprises a substrate, a thin film transistor, an insulating layer, an etching barrier layer and an electrode layer, wherein the thin film transistor comprises a gate electrode, a semiconductor layer, a source electrode and a drain electrode; the insulating layer is arranged on the gate electrode and the substrate; the etching barrier layer is arranged on the semiconductor layer and the insulating layer; the electrode layer comprises a first electrode part and a second electrode part; the first electrode part is arranged on the source electrode, and used for covering and protecting the source electrode; the second electrode part is arranged on the drain electrode, and used for covering and protecting the drain electrode, wherein the semiconductor layer is arranged on the insulating layer; a first through hole and a second through hole are formed in the etching barrier layer; and the source electrode and the drain electrode are connected with the semiconductor layer through the first through hole and the second through hole separately. The manufacturing process for the thin film transistor array panel can be simplified and the manufacturing cost can be saved.
Description
【Technical field】 [0001] The invention relates to the field of display technology, in particular to a thin film transistor array panel and a manufacturing method thereof. 【Background technique】 [0002] Traditional thin film transistor array panels generally require six photomask processes. [0003] The above-mentioned traditional thin film transistor array panel is generally provided with a protection layer / passivation layer (PassivationLayer). The fabrication of the protection layer / passivation layer requires one photomask process. [0004] Since six mask manufacturing processes are required, the manufacturing process of the above-mentioned traditional thin film transistor array panel is more complicated and the cost is higher. [0005] Therefore, it is necessary to propose a new technical solution to solve the above technical problems. 【Content of invention】 [0006] The object of the present invention is to provide a thin film transistor array panel and a manufactur...
Claims
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IPC IPC(8): H01L27/12H01L21/77
CPCH01L21/77H01L27/1214H01L27/1259H01L2021/775H01L29/41733H01L29/66742H01L29/7869H10K10/46H10K59/1213H01L27/1225H01L29/66765H01L29/768H01L29/78618
Inventor 周志超夏慧
Owner TCL CHINA STAR OPTOELECTRONICS TECH CO LTD