Data backup method and system based on heterogeneous hybrid memory

A technology of data backup and mixed memory, which is applied in the direction of data error detection and response error generation, which can solve the problems of low efficiency and other problems.

Active Publication Date: 2016-07-20
深圳市研祥智慧科技股份有限公司
View PDF3 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the data in the DRAM memory is backed up in a conventional way, and the efficiency becomes low

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Data backup method and system based on heterogeneous hybrid memory
  • Data backup method and system based on heterogeneous hybrid memory
  • Data backup method and system based on heterogeneous hybrid memory

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0043] Such as figure 1 Shown is a block diagram of a heterogeneous hybrid memory.

[0044] The heterogeneous hybrid memory adopts the same physical connection method as the DDR3 interface circuit. The heterogeneous hybrid memory is inserted into the commonly used DDR3 interface circuit for use. The address (Addr), command (Cmd) and data transmitted by the operating system to the heterogeneous hybrid memory Information such as (Data) is input to the controller (Controller) through the interface circuit, and the controller (Controller) controls the access and control of the conventional memory DRAM and the non-volatile storage medium NVM through the received data and internal logic. Among them, the controller (Controller) can use processors such as MCU (MicroControl Unit, micro control unit), FPGA (Field Programmable Gate Array, field programmable gate array), CPLD (Complex Programmable Logic Device, complex programmable logic device) and ARM (Advanced RISCMachines, RISC proces...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a data backup method based on a heterogeneous hybrid memory. The data backup method based on the heterogeneous hybrid memory comprises the steps: judging a memory application manner; if needing to utilize a non-volatile memory (NVM) to apply, backing up data in a memory application with an NVM sign to the NVM, thereby avoiding that data in a dynamic random access memory (DRAM) is re-backed up to a magnetic disk according to a conventional method; meanwhile, judging whether the memory application with the NVM sign is a first backup; if the memory application with the NVM sign is not the first backup, performing incremental backup on the data to the NVM, thereby avoiding repeated backup. Therefore, the data backup method based on the heterogeneous hybrid memory can fully exert the advantages of the heterogeneous hybrid memory, avoids a repeated backup operation and improves data backup efficiency. Furthermore, the invention provides a data backup system based on the heterogeneous hybrid memory.

Description

technical field [0001] The invention relates to data backup technology, in particular to a highly efficient data backup method and system based on heterogeneous hybrid memory. Background technique [0002] With the development of emerging non-volatile memory medium (Non-VolatileMemory, NVM) technology represented by resistance memory, ferroelectric memory, phase change memory, etc., the boundary between traditional memory and storage has gradually become blurred. The development of storage technology has laid a good foundation for the emergence of new memory and storage architectures. [0003] By combining the new NVM and DRAM (Dynamic Random Access Memory, dynamic random access memory), a hybrid memory architecture is built to form a heterogeneous hybrid memory. Heterogeneous hybrid memory has the characteristics of NVM and DRAM at the same time, which meets the conventional memory interface of existing industrial control equipment, without the need to introduce new indust...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G06F11/14
Inventor 马先明庞观士徐成泽王志远沈航梁艳妮陈志列
Owner 深圳市研祥智慧科技股份有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products