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Vertical Metal Insulator Metal Capacitors

A technology of insulating structures and devices, applied in capacitors, semiconductor devices, electric solid devices, etc., can solve the problems of MIM capacitance variation and difficult control of thickness between metal layers.

Active Publication Date: 2018-08-31
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the thickness between metal layers is difficult to control
This results in a large variation of the MIM capacitance in the product for the target value

Method used

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  • Vertical Metal Insulator Metal Capacitors
  • Vertical Metal Insulator Metal Capacitors
  • Vertical Metal Insulator Metal Capacitors

Examples

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Embodiment Construction

[0019] The following disclosure provides many different embodiments or examples for implementing different features of the presented subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, these are only examples and are not intended to limit the invention. For example, in the following description, forming a first part over or on a second part may include embodiments in which the first part and the second part are formed in direct contact, and may also include an embodiment in which the first part and the second part are formed in between. An embodiment where the additional part is such that the first part and the second part are not in direct contact. Additionally, the invention may repeat reference numerals and / or characters in multiple instances. This repetition is for the purposes of simplicity and clarity and does not in itself indicate a relationship between the various embodiments and / or conf...

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PUM

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Abstract

The invention discloses a semiconductor device and a forming method. The semiconductor device includes a device die, a molding layer surrounding the device die, a plurality of first vertical conductive structures formed in the molding layer, and a plurality of second vertical interconnect structures formed in the molding layer. The first vertical conductive structures and the second vertical conductive structures are interlaced, and the insulating structure is formed between the first vertical conductive structures and the second vertical conductive structures. The invention also discloses a vertical metal insulator metal capacitor.

Description

[0001] Cross References to Related Applications [0002] This application is a continuation of U.S. Application Serial No. 14 / 600,777, filed January 20, 2015, which is a continuation of U.S. Application Serial No. 14 / 337,530, filed July 22, 2014 and claims priority to U.S. Application No. 12 / 825,605, filed June 29, 2010, which claims priority to U.S. Provisional Application No. 61 / 259,787, filed October 10, 2009 , the entire contents of which are hereby incorporated by reference. technical field [0003] The present invention generally relates to the field of semiconductor technology, and more particularly, to a semiconductor device and a method for forming the same. Background technique [0004] Capacitors are widely used in integrated circuits. The capacitance of the capacitor is proportional to the area of ​​the capacitor and the dielectric constant (k) of the insulating layer, and the capacitance of the capacitor is inversely proportional to the thickness of the insula...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/64H01L21/02
CPCH01L28/40H01L28/60H01L23/642H01L23/58H01L24/19H01L24/20H01L2224/04105H01L2224/12105H01L2224/24195H01L2224/32225H01L2224/73267H01L2224/92244H01L2924/19041H01L2924/19105H01L2224/19H01L21/568H01L2224/83005
Inventor 廖文翔周淳朴
Owner TAIWAN SEMICON MFG CO LTD