Damascene structure and formation method of damascene structure

Abstract

A structure and a formation method of a semiconductor device are provided. The semiconductor device includes a semiconductor substrate and a first conductive feature over the semiconductor substrate. The semiconductor device also includes a first dielectric layer over the semiconductor substrate and surrounding the first conductive feature. The semiconductor device further includes a second conductive feature over the first conductive feature, and the second conductive feature extends into the first conductive feature. In addition, the semiconductor device includes a second dielectric layer over the first dielectric layer and surrounding the second conductive feature. The semiconductor device also includes an etch stop layer between the first dielectric layer and the second dielectric layer. The etch stop layer surrounds the first conductive feature, and a bottom surface of the second conductive feature is above the etch stop layer. The invention also relates to a damascene structure and formation method of damascene structure.

Description

technical field [0001] The present invention relates to integrated circuit devices, and more particularly, to structures and methods of forming damascene structures. Background technique [0002] The semiconductor integrated circuit (IC) industry has experienced rapid growth. Technological advances in IC materials and design have produced generations of ICs, where each generation has smaller and more complex circuits than the previous generation. In the course of IC evolution, functional density (ie, the number of interconnected devices per chip area) has generally increased, while feature size (ie, the smallest component that can be produced using a fabrication process) has decreased. This scaled-down process often provides benefits by increasing production efficiency and reducing associated costs. [0003] One approach used by the industry to meet the demand for device density is to employ damascene and dual damascene structures for interconnect structures. In the damas...

AI Technical Summary

Problems solved by technology

As a result, manufacturing processes are continually becoming more difficult to implement

Forming interconnect structures with ever-shorter pitches in semiconductor devices is a challenge

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