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Light-Emitting Diode Chip

A technology of light-emitting diodes and chips, which is applied to electrical components, circuits, semiconductor devices, etc., can solve the problems of ineffective use of light and waste of electric energy, and achieve good luminous efficiency

Inactive Publication Date: 2016-08-24
GENESIS PHOTONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The electrodes of the LED chip are usually made of metal material. Due to the opacity of the metal material, the light emitted by the area covered by the electrode on the LED chip cannot be effectively used.
In this way, it will cause waste of electric energy
Therefore, a technology has been developed to make a current blocking layer between the electrode and the semiconductor element layer. However, there is still much room for improvement to improve the luminous efficiency of the LED chip through the current blocking layer.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

no. 1 example

[0072] Figure 1A to Figure 1C is a schematic cross-sectional view of a light emitting diode chip according to the present invention, and Figure 2A to Figure 2E It is a schematic top view of different LED chips according to the first embodiment of the present invention.

[0073] Please refer to Figure 1A The LED chip 100 a of this embodiment includes a semiconductor element layer 110 , a first electrode 120 , a current blocking layer 130 , a current spreading layer 140 and a second electrode 150 . The semiconductor element layer 110 includes a first-type doped semiconductor layer 112, a light-emitting layer 114, and a second-type doped semiconductor layer 116, wherein the light-emitting layer 114 is located between the first-type doped semiconductor layer 112 and the second-type doped semiconductor layer. Between layers 116. The first electrode 120 is electrically connected to the first type doped semiconductor layer 112 . The current blocking layer 130 is disposed on the...

no. 2 example

[0087] Figure 3A to Figure 3C It is a schematic top view of different LED chips according to the second embodiment of the present invention. Please refer to Figure 1A to Figure 1C and Figure 3A The LED chip 200 of this embodiment includes a semiconductor element layer 110 , a first electrode 120 , a current blocking layer 230 , a current spreading layer 140 and a second electrode 150 . The semiconductor element layer 110 includes a first-type doped semiconductor layer 112, a light-emitting layer 114, and a second-type doped semiconductor layer 116, wherein the light-emitting layer 114 is located between the first-type doped semiconductor layer 112 and the second-type doped semiconductor layer. Between layers 116. The first electrode 120 is electrically connected to the first type doped semiconductor layer 112 . The current blocking layer 230 includes a main body 232 and an extension portion 234 extending from the main body 232 . The current blocking layer 230 is dispose...

no. 3 example

[0095] Figure 4A to Figure 4B is a schematic cross-sectional view of different LED chips according to the third embodiment of the present invention, please refer to Figure 4A . In this embodiment, the LED chip 300a is similar to Figure 1A The light emitting diode chip 100a of the embodiment. For the components of light emitting diode chip 300a and related descriptions, please refer to Figure 1A The light emitting diode chip 100a of the embodiment will not be described in detail here. The difference between the LED chip 300a and the LED chip 100a is that the LED chip 300a includes a current spreading layer 140a and a current spreading layer 140b. The current spreading layer 140 a is disposed on the second-type doped semiconductor layer 116 to cover the current blocking layer 130 , and the current spreading layer 140 b is disposed on the first-type doped semiconductor layer 112 . In this embodiment, the LED chip 300a further includes a protective layer 170 disposed on t...

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Abstract

A light-emitting diode chip including a semiconductor device layer, a first electrode, a current-blocking layer, a current-spreading layer, and a second electrode is provided. The semiconductor device layer includes a first-type doped semiconductor layer, a second-type doped semiconductor layer, and a light-emitting layer located between the first-type and second-type doped semiconductor layers. The first electrode is electrically connected to the first-type doped semiconductor layer. The current-blocking layer is disposed on the second-type doped semiconductor layer, and the current-blocking layer includes a main body and an extension portion extended from the main body. The current-spreading layer covers the current-blocking layer. The second electrode is electrically connected to the second-type doped semiconductor layer via the current-spreading layer, wherein the second electrode includes a bonding pad and a finger portion extended from the bonding pad, the bonding pad is located above the main body, the finger portion is located above the extension portion, and a partial region of the finger portion does not overlap the extension portion. The light-emitting diode chip has the current-blocking layer in order to effectively control current gathering position, so that luminous efficiency is effectively improved.

Description

technical field [0001] The present invention relates to a light-emitting element, and in particular to a light-emitting diode (Light-Emitting Diode, LED for short) chip. Background technique [0002] With the advancement of semiconductor technology, today's light-emitting diodes have the characteristics of high brightness and high color rendering. In addition, light-emitting diodes have the advantages of power saving, small size, low-voltage drive, and mercury-free. Light-emitting diodes have been widely used In display and lighting and other fields. Generally speaking, the luminous efficiency of the LED chip is related to the internal quantum efficiency (ie, light extraction rate) of the LED chip. When more ratios of the light emitted by the light-emitting layer can pass through the LED chip, it means that the internal quantum efficiency of the LED chip is better. The electrodes of the LED chip are usually made of metal material. Due to the opacity of the metal material, ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/14H01L33/36H01L33/38
CPCH01L33/145H01L33/36H01L33/38H01L33/20H01L2933/0016
Inventor 郭祐祯赖腾宪康凯舜兰彦廷黄靖恩
Owner GENESIS PHOTONICS