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A d-flip-flop resistant to single-event upset

An anti-single event and flip-flop technology, which is applied in the direction of pulse technology, pulse generation, electrical components, etc., can solve the problem that D flip-flop cannot meet the anti-single event flipping and other problems

Active Publication Date: 2018-10-12
NAT UNIV OF DEFENSE TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The technical problem to be solved by the present invention is: the existing reinforced D flip-flop cannot meet the requirement of anti-single event flip-flop in the radiation environment, and the traditional three-mode redundant reinforcement technology of D flip-flop cannot avoid the single event flip-flop caused by the election circuit In addition to the problem of large area overhead, a D flip-flop that resists single event flips is provided, which has stronger anti-single event flip-flop capability, and effectively reduces the area overhead of the triple-mode redundancy reinforcement technology, eliminating the single-event sensitivity caused by the election circuit. sexual problems

Method used

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  • A d-flip-flop resistant to single-event upset
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Examples

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Embodiment Construction

[0026] figure 1 It is a logic structure diagram of a D flip-flop using a master-slave two-level latch structure.

[0027] Both the ordinary D flip-flop and the D flip-flop of the present invention are composed of a master latch (latch) and a slave latch connected in series. The master latch and the slave latch have exactly the same structure.

[0028] figure 2 It is a logic structure diagram of a master-slave two-level latch and a latch core in a common D flip-flop in the background technology.

[0029] The master latch or slave latch of an ordinary D flip-flop is composed of an input inverter with clock control, a feedback inverter with clock control and an inverter. The core of the latch consists of two inverters connected end to end.

[0030] image 3 (a) is the third inverter, which is composed of a PMOS transistor and an NMOS transistor, wherein the drains of the PMOS transistor and the NMOS transistor are connected to form the output of the inverter, and the gates ...

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Abstract

The invention discloses a D trigger resistant to single event upset. The D trigger is formed by master and slave latches connected in series. The master latch and the slave latch have completely same structure. The core of a latch is no longer composed of two end-to-end inverters, but six PMOS transistors P1 to P6 and six NMOS transistors N1 to N6. The master latch or the slave latch of the invention can be formed by adding a clock-controlled transistor to the core of the latch. Compared with triplication redundancy in the prior art, the D trigger not only save the area of an election circuit, but also eliminate single event sensitivity due to the election circuit. Further, the D trigger is lower in single event sensitivity and better in single event upset resistance when storing a numerical value 0. Since many triggers are required to hold the same numerical value for a long time in practical application, the invention is significant to enhance the single event upset resistance of the kind of the triggers.

Description

technical field [0001] The invention relates to a flip-flop in the field of integrated circuits, in particular to a D flip-flop resistant to single-event reversal in a radiation environment. Background technique [0002] There are a large number of high-energy particles (protons, heavy ions, etc.) and high-energy rays in the universe. A sequential unit in an integrated circuit, such as a flip-flop, will generate a Single Event Upset (SEU for short) after being bombarded by these high-energy particles and rays. The generation of single-event upsets will produce soft errors, which will make the operation of integrated circuits go wrong. As the process size continues to shrink, the transistor density of integrated circuits continues to increase, and the probability of multiple transistors being bombarded by single particles at the same time is greatly increased, and the reduction in the size of the transistor itself makes the critical charge that represents the state of the de...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03K3/3562
CPCH03K3/3562
Inventor 黄鹏程陈书明郝培培
Owner NAT UNIV OF DEFENSE TECH
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