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Erasing method for storage units

A technology of storage unit and erasing block, which is applied in the field of storage and can solve problems such as difficult erasing of storage units

Inactive Publication Date: 2016-09-28
GIGADEVICE SEMICON (BEIJING) INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the manufacturing process of the Flash chip, some memory cells are difficult to be erased. The existing solution is: in order to ensure the correctness of erasing, increase the number of erasing times, but at the expense of erasing speed

Method used

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  • Erasing method for storage units

Examples

Experimental program
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Embodiment 1

[0030] figure 2 It is a flow chart of a method for erasing a storage unit provided by Embodiment 1 of the present invention. This embodiment is applicable to performing an erasing operation on some storage units that are difficult to be successfully erased. see figure 2 The erasing method of the storage unit provided in this embodiment specifically includes the following steps:

[0031] S110. Perform an erase operation on multiple storage units corresponding to the address of the current erase block according to the erase instruction.

[0032] In this embodiment, the current erasing block may specifically be a memory cell block that needs to be erased in the memory cell array of the flash memory. The storage unit array of each flash memory is composed of a plurality of storage unit blocks, the storage unit block is composed of a plurality of storage unit pages, and the storage unit page is composed of a plurality of storage units connected in rows and columns. In a memory...

Embodiment 2

[0045] image 3 It is a flowchart of a memory cell erasing method provided by Embodiment 2 of the present invention. This embodiment is further optimized on the basis of Embodiment 1. Before increasing the pulse width of the erasing voltage, it is added: by erasing The counter accumulates the number of erasing failures of multiple storage units corresponding to the current erase block address. The advantage of this optimization is that it avoids unlimited erasure of multiple storage units corresponding to the current erase block address. In addition, the entire program falls into an infinite loop. see image 3 The erasing method of the storage unit provided in this embodiment specifically includes the following steps:

[0046] S210. Perform an erase operation on multiple storage units corresponding to the address of the current erase block according to the erase instruction.

[0047] S220. Perform erasure verification on each storage unit corresponding to the erase block ad...

Embodiment 3

[0060] Figure 4 It is a flow chart of a method for erasing a storage unit provided by Embodiment 3 of the present invention. This embodiment is further optimized on the basis of the above-mentioned embodiments, adding a method for judging whether the current erase block address is the last erase block address. The advantage of optimizing the operation of the block address is that the erasing operation of the entire erasing area can be completed quickly. see Figure 4 The erasing method of the storage unit provided in this embodiment specifically includes the following steps:

[0061] S310. Perform an erase operation on multiple storage units corresponding to the address of the current erase block according to the erase instruction.

[0062] S320. Perform an erasure check on each storage unit corresponding to the erase block address, and check whether the current state of each storage unit is erased successfully. If yes, perform step S330; otherwise, perform step S360.

[0...

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Abstract

The invention discloses an erasing method for storage units. The method comprises: according to an erasing instruction, carrying out an erasing operation on a plurality of storage units corresponding to a current erasing block address; carrying out erasing verification on each storage unit corresponding to the erasing block address, checking if a current state of each storage unit is a successful erasing state, ending the current erasing operation if yes, or increasing a pulse width of an erasing voltage and returning to execute the erasing operation carried out on the plurality of storage units corresponding to the current erasing block address until each storage unit corresponding to each erasing block address is successfully erased. According to the erasing method for the storage units which is provided by the embodiment of the invention, by continuously increasing the pulse width of the erasing voltage along with increase of erasing times, rapid erasion on the storage units is implemented, and an erasing speed is improved.

Description

technical field [0001] The embodiment of the present invention relates to the field of storage technologies, and in particular to a method for erasing a storage unit. Background technique [0002] Non-volatile flash memory (nor flash / nand flash) is a very common memory chip, which has the advantages of random access memory (RAM) and read-only memory (Read-Only Memory, ROM). It will not be lost. It is a memory that can be electrically erased and written in the system. At the same time, its high integration and low cost make it the mainstream of the market. The Flash chip is composed of thousands of internal storage units, each storage unit stores one bit of data, multiple storage units form a page, and multiple pages form a block. It is precisely because of this special physical structure that in nor flash / In nand flash, data is read / written (erase operation) in units of pages, and data is erased in units of blocks. [0003] In a Flash chip, a storage unit can be regarded ...

Claims

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Application Information

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IPC IPC(8): G11C16/16
CPCG11C16/16
Inventor 潘荣华薛子恒
Owner GIGADEVICE SEMICON (BEIJING) INC
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