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MnGa-base vertical magnetic tunnel junction taking Heusler alloy as intercalation, and preparation method

A perpendicular magnetic, tunnel junction technology with applications in the fabrication/processing of electromagnetic devices, material selection, field-controlled resistors, etc.

Active Publication Date: 2016-09-28
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, there is still a certain gap between the highest TMR that the above system can achieve and the requirements of practical devices.

Method used

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  • MnGa-base vertical magnetic tunnel junction taking Heusler alloy as intercalation, and preparation method
  • MnGa-base vertical magnetic tunnel junction taking Heusler alloy as intercalation, and preparation method
  • MnGa-base vertical magnetic tunnel junction taking Heusler alloy as intercalation, and preparation method

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Embodiment Construction

[0027] In order to explain the specific implementation of the present invention more clearly, a specific embodiment of a MnGa-based vertical magnetic tunnel junction with a Heusler alloy as the intercalation will be described below:

[0028] See figure 1 As shown, the present invention provides a MnGa-based vertical magnetic tunnel junction with Heusler alloy as an intercalation layer, including:

[0029] A substrate 1 is a semi-insulating GaAs (001) material, which is the basis for realizing the epitaxial growth of a multilayer film;

[0030] A buffer layer 2, epitaxially grown on the substrate 1, made of a semi-metallic Heusler alloy Co 2 MnSi film composition, used to smooth the surface of the substrate and buffer the lattice mismatch between the substrate and the long layer structure;

[0031] The lower electrode 3 is epitaxially grown on the buffer layer 2, which is composed of about 20nm L1 0 -MnGa thin film composition; the electrode material has high perpendicular magnetic anis...

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Abstract

The invention discloses an MnGa-base vertical magnetic tunnel junction taking a Heusler alloy as an intercalation. The MnGa-base vertical magnetic tunnel junction comprises a substrate which is the base for realizing epitaxial growth of a multilayer film; a buffer layer which is manufactured on the substrate and is used for smoothing the surface of the substrate and reducing crystal lattice mismatch; a lower electrode which is manufactured on the buffer layer and grows in an epitaxial mode; a lower intercalation which is manufactured on the lower electrode and grows in an epitaxial mode; a barrier layer which is manufactured on the lower intercalation; an upper intercalation which is manufactured on the barrier layer and grows in an epitaxial mode; an upper electrode which is manufactured on the upper interaction and grows in an epitaxial mode; and a coverage layer which is manufactured on the upper electrode and protects a lower-layer structure. The MnGa-base vertical magnetic tunnel junction has a quite high tunneling magnetoresistance effect.

Description

Technical field [0001] The invention relates to the field of spintronics materials and magnetoresistive random access memory with a magnetic tunnel junction as the core, in particular to a MnGa-based vertical magnetic tunnel junction with Heusler alloy as an intercalation layer and a preparation method. technical background [0002] The continuous development of magnetic storage devices has realized high-density and large-capacity data storage and miniaturized electronic components, which have brought great convenience to our daily lives. However, all of this is closely related to the research of spintronics materials and related devices. The core component of a magnetoresistive random access memory (MRAM) is a magnetic tunnel junction, which is usually composed of a ferromagnetic metal electrode / insulator barrier / ferromagnetic metal electrode sandwich structure. The relative orientation of the magnetic moments of the two ferromagnetic electrodes (parallel or anti-parallel) can ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/08H01L43/10H01L43/12
CPCH10N50/01H10N50/85H10N50/10
Inventor 鲁军毛思玮赵旭鹏赵建华
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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