Heusler alloy intercalated mnga-based vertical magnetic tunnel junction and preparation method

A perpendicular magnetic, tunnel junction technology with applications in the fabrication/processing of electromagnetic devices, material selection, field-controlled resistors, etc.

Active Publication Date: 2019-08-16
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, there is still a certain gap between the highest TMR that the above system can achieve and the requirements of practical devices.

Method used

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  • Heusler alloy intercalated mnga-based vertical magnetic tunnel junction and preparation method
  • Heusler alloy intercalated mnga-based vertical magnetic tunnel junction and preparation method
  • Heusler alloy intercalated mnga-based vertical magnetic tunnel junction and preparation method

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Embodiment Construction

[0028] In order to set forth the specific embodiment of the present invention more clearly, a specific example of a Heusler alloy intercalated MnGa-based vertical magnetic tunnel junction will be described below:

[0029] see figure 1 As shown, the present invention provides a kind of Heusler alloy as the intercalated MnGa-based vertical magnetic tunnel junction, comprising:

[0030] A substrate 1, which is a semi-insulating GaAs (001) material, is the basis for realizing the epitaxial growth of a multilayer film;

[0031] A buffer layer 2, grown epitaxially on the substrate 1, consists of about 4 nm thick semi-metal Heusler alloy Co 2 MnSi film composition for smoothing the substrate surface and buffering the lattice mismatch between the substrate and the long layer structure;

[0032] The lower electrode 3 is epitaxially grown on the buffer layer 2, consisting of about 20nm of L1 0 -MnGa thin film composition; the electrode material has high vertical magnetic anisotropy, ...

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Abstract

A Heusler alloy is an intercalated MnGa-based vertical magnetic tunnel junction, comprising: a substrate, which is the basis for realizing multilayer film epitaxial growth; a buffer layer, which is fabricated on the substrate, for smoothing the substrate surface and reducing the Small lattice mismatch; the lower electrode, which is made on the buffer layer, and epitaxial growth; the lower intercalation layer, which is made on the lower electrode, and epitaxial growth; one barrier layer, which is made on the lower intercalation layer; one upper intercalation layer, It is fabricated on the potential barrier layer and grown epitaxially; an upper electrode is fabricated on the upper intercalation layer and grown epitaxially; a covering layer is fabricated on the upper electrode to protect the lower structure. The invention has higher tunneling magnetoresistance effect.

Description

technical field [0001] The invention relates to the fields of spintronics materials and magnetoresistive random access memory with a magnetic tunnel junction as the core, in particular to a MnGa-based vertical magnetic tunnel junction with a Heusler alloy as an intercalation layer and a preparation method thereof. [0002] technical background [0003] The continuous development of magnetic storage devices has enabled high-density, large-capacity data storage and miniaturized electronic components, bringing great convenience to our daily lives. However, all of this is closely related to the study of spintronic materials and related devices. The core component of a magnetoresistive random access memory (MRAM) is a magnetic tunnel junction, which usually consists of a ferromagnetic metal electrode / insulator barrier / ferromagnetic metal electrode sandwich structure. The relative orientation of the magnetic moments of the two ferromagnetic electrodes (parallel arrangement or anti...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L43/08H01L43/10H01L43/12
CPCH10N50/01H10N50/85H10N50/10
Inventor 鲁军毛思玮赵旭鹏赵建华
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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