Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Semiconductor device

A technology of semiconductors and conductive parts, which is applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., and can solve problems such as strong electric fields and reduced withstand voltages

Inactive Publication Date: 2016-10-05
KK TOSHIBA
View PDF5 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when the semiconductor device is a transistor, if the on-current is increased, a strong electric field may be locally generated and the withstand voltage may be lowered.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor device
  • Semiconductor device
  • Semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

no. 1 approach

[0020] figure 1 (a) and figure 1 (b) is a schematic diagram illustrating the semiconductor device of the first embodiment.

[0021] figure 1 (a) is a schematic cross-sectional view of the semiconductor device 101, figure 1 (b) is a plan view of the semiconductor device 101.

[0022] figure 1 (a) Yes figure 1 (b) A cross-sectional view of line A1-A2 shown. figure 1 (b) is from figure 1 (a) The top view viewed from above.

[0023] The semiconductor device 101 is a HEMT (High Electron Mobility Transistor) made of, for example, a nitride semiconductor.

[0024] Such as figure 1 As shown in (a), the semiconductor device 101 includes a first semiconductor layer 11, a second semiconductor layer 12, a source electrode 21, a drain electrode 22, a gate electrode 23, a gate insulating film 40, and interlayer insulating films 41 and 42 , The first field plate electrode (FP electrode 31), and the second field plate electrode (FP electrode 32).

[0025] In addition, in figure 1 In the plan view of (...

no. 2 approach

[0080] Image 6 It is a schematic cross-sectional view illustrating the semiconductor device of the second embodiment.

[0081] Image 6 In the illustrated semiconductor device 105, the second semiconductor layer 12 has a multilayer structure. Regarding other configurations, the same components as those described for the semiconductor device 101 are assigned the same reference numerals, and descriptions thereof will be omitted.

[0082] The second semiconductor layer 12 has a laminated structure, and includes the first to third layers 13a to 13c.

[0083] The first layer 13a is disposed on the first semiconductor layer 11 and is in contact with the first semiconductor layer 11. The first layer 13a contains Al x2 Ga 1-x2 N(x1

[0084] The second layer 13b is disposed on the first layer 13a and is in contact with the first layer 13a. The second layer 13b is an AlN layer. The thickness of the second layer is 1 nm or more and 3 nm or less.

[0085] The third layer 13c is disposed...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

Embodiments of the present invention provide a semiconductor device capable of improving withstand voltage. According to an embodiment, there is provided a semiconductor device including a first semiconductor layer, a second semiconductor layer provided on the first semiconductor layer, a source electrode and a drain electrode provided on the second semiconductor layer, a gate electrode, and the first field plate electrode. The second semiconductor layer includes a first semiconductor portion and a second semiconductor portion thinner than the first semiconductor portion. The source electrode and the drain electrode are electrically connected to the second semiconductor layer. The gate electrode is disposed on the second semiconductor layer between the source electrode and the drain electrode. The first field plate electrode is disposed on the second semiconductor layer and includes a conductive part. The conductive portion is provided between the gate electrode and the drain electrode when viewed along the first direction from the first semiconductor layer to the second semiconductor layer. At least a part of an end of the conductive portion is located on the second semiconductor portion.

Description

[0001] [Related Application Case] [0002] This application enjoys priority based on Japanese Patent Application No. 2014-186154 (application date: September 12, 2014). This application contains all the contents of the basic application by referring to the basic application. Technical field [0003] Embodiments of the present invention relate to a semiconductor device. Background technique [0004] The band gap (band gap) of nitride semiconductor is larger than that of silicon. Therefore, a semiconductor device using a nitride semiconductor as a material can realize a high withstand voltage. However, when the semiconductor device is a transistor, if the on-current is increased, a strong electric field may be locally generated, which may result in a decrease in withstand voltage. For such semiconductor devices, it is required to increase the withstand voltage. Summary of the invention [0005] Embodiments of the present invention provide a semiconductor device capable of improving...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L29/778
CPCH01L29/66462H01L21/30612H01L21/308H01L29/0657H01L29/1033H01L29/2003H01L29/404H01L29/4236H01L29/42368H01L29/7786
Inventor 大麻浩平吉冈启矶部康裕
Owner KK TOSHIBA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com