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Ferroelectric film and manufacturing method thereof

A technology of ferroelectric film and total content, applied in chemical instruments and methods, manufacturing/assembly of piezoelectric/electrostrictive devices, circuits, etc., can solve problems such as inability to obtain sufficient characteristics, achieve excellent life reliability, Life-enhancing effect

Active Publication Date: 2020-08-25
MITSUBISHI MATERIALS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] As described in Patent Document 1, reducing the content of Li, Na, and K can reduce the leakage current of the PLZT film, but it may not be possible to obtain sufficient characteristics from the viewpoint of lifetime reliability.

Method used

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  • Ferroelectric film and manufacturing method thereof
  • Ferroelectric film and manufacturing method thereof
  • Ferroelectric film and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0073] Next, the embodiments of the invention of the present application will be described in detail in conjunction with comparative examples.

[0074]

[0075] By the method described in Patent Document 1, lead acetate trihydrate (Pb source), lanthanum acetate (La source), tetraisopropoxytitanium (Ti source), tetrabutoxyzirconium (Zr source) ) was highly purified by repeated recrystallization from ultrapure water twice, and was used as a precursor. The precursors were weighed so that the metal atomic ratios Pb / La / Zr / Ti became 110 / 3 / 52 / 48, and these were added to propylene glycol in the reaction vessel to prepare a synthesis solution. After the synthesis liquid was refluxed at a temperature of 150° C. for 60 minutes in a nitrogen atmosphere, the solvent was removed by distillation. Thereafter, acetylacetone was added as a stabilizer, and the mixture was refluxed at 150° C. for 60 minutes.

[0076] Next, by adding propylene glycol to the above synthesis liquid, the total co...

Embodiment 2~9、 comparative example 1~4

[0081] As described in Table 1, ferroelectric films were formed in the same manner as in Example 1 except that various conditions were changed. Specifically, in some embodiments, the film thickness of the fired film is changed by adjusting the rotational speed and time of the spin coater. Furthermore, in some embodiments, the number of repetitions of the process (firing times) and the film thickness of the ferroelectric film are changed. In some examples and comparative examples, liquid compositions having different concentrations of Li and the like were used by changing the number of times of high purification by recrystallization. In some comparative examples, the wind speed in the preliminary sintering process was changed. In Example 9, the metal atomic ratio Pb / La / Zr / Ti of the precursor was set to 110 / 0 / 52 / 48.

[0082]

[0083] For the ferroelectric films formed in Examples and Comparative Examples, the total concentration of Li and the like in the film, the concentrat...

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Abstract

The present invention provides a ferroelectric film excellent in lifetime reliability and a method for manufacturing the same. The ferroelectric film of the present invention is composed of a plurality of fired films, the ferroelectric film is composed of a perovskite-structure metal oxide containing Pb, Zr, and Ti, and the total content of Li, Na, and K is 3 mass ppm or less The total content of Li, Na, and K on one side of each fired film constituting the plurality of fired films is 5 times or more than the total content of Li, Na, and K on the other side.

Description

technical field [0001] The invention of the present application relates to a ferroelectric film with improved lifetime reliability and a manufacturing method thereof. [0002] This application claims priority based on Patent Application No. 2015-064152 filed in Japan on March 26, 2015 and Patent Application No. 2016-054836 filed in Japan on March 18, 2016, and uses the contents thereof here. Background technique [0003] PLZT with a perovskite structure containing Pb, La, Zr, and Ti is used as ferroelectric films used in infrared sensors, piezoelectric filters, vibrators, laser modulation elements, optical gates, capacitor films, and nonvolatile memories. membrane. For example, Patent Document 1 discloses a PLZT film in which the contents of Li, Na, and K are reduced and leakage current is suppressed. [0004] Patent Document 1: Japanese Patent No. 2956356 (B) [0005] As described in Patent Document 1, reducing the contents of Li, Na, and K can reduce the leakage current...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L41/43C04B35/491
CPCC04B35/491C04B2235/3227C23C18/1216C23C18/1225C23C18/1254C04B35/62218C04B2235/3201C04B2235/3203C04B2235/441C04B2235/449C04B2235/768C04B2235/6562C04B2235/72C04B2235/75C04B2237/346C04B2237/704B32B18/00H10N30/8554H10N30/078H01G4/1245
Inventor 樱井英章藤井顺曽山信幸
Owner MITSUBISHI MATERIALS CORP