A kind of people counting sensor and manufacturing method thereof
A technology of counting sensors and manufacturing methods, which is applied in the direction of counting mechanisms/items, instruments, etc., can solve the problems of small space gap between personnel, many misjudgments, and low cost, so as to meet the requirements of large-scale production and installation, realize popular application, reduce The effect of applying costs
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Embodiment 1
[0032] A. On the silicon substrate 1, 16 thermally insulating organic bosses 3 with a height of 10-100 um are produced by photolithography and development by spin coating;
[0033] B. The lower electrode 2 is made on the upper surface and side surface of each thermal insulation organic boss 3 and the upper surface of the silicon substrate 1 by photolithography stripping method, and the lower electrode 2 is made of CrAu alloy with a thickness of 100-300nm ;
[0034] C. Form a thin film layer 4 on the surface of the sample treated by step B by sputtering, and then partially corrode and remove the thin film layer other than the heat-insulating organic bosses by photolithography and development, wherein the thin film layer The surface area is 20% smaller than the upper surface area of the heat-insulating organic boss, and the thin film layer 4 is made of PZT material;
[0035] D, adopt stripping method to prepare upper electrode 5 on the surface of described film layer 4, descr...
Embodiment 2
[0038] A. On the silicon substrate 1, 16 heat-insulating organic bosses 3 with a height of 10 um are produced by photolithography and development by spin coating;
[0039] B. The lower electrode 2 is made on the upper surface, side surface and upper surface of the silicon substrate 1 of each heat-insulating organic boss 3 by photolithography stripping method, and the lower electrode 2 is made of TiAu alloy with a thickness of 100 nm;
[0040] C. Form a thin film layer 4 on the surface of the sample treated by step B by sputtering, and then partially corrode and remove the thin film layer other than the heat-insulating organic bosses by photolithography and development, wherein the thin film layer The surface area is 20% smaller than the upper surface area of the heat-insulating organic boss, and the thin film layer 4 is made of PZT material;
[0041] D, on the surface of the film layer 4, the upper electrode 5 is prepared by stripping, the upper electrode 5 is made of TiW al...
Embodiment 3
[0044] A. On the silicon substrate 1, 16 heat-insulating organic bosses 3 with a height of 100 um are produced by photolithography and development by spin coating;
[0045] B. The lower electrode 2 is made on the upper surface, side surface and upper surface of the silicon substrate 1 of each heat-insulating organic boss 3 by photolithography stripping method, and the lower electrode 2 is made of Cr with a thickness of 300nm;
[0046] C. Form a thin film layer 4 on the surface of the sample treated by step B by sputtering, and then partially corrode and remove the thin film layer other than the heat-insulating organic bosses by photolithography and development, wherein the thin film layer The surface area is 20% smaller than the upper surface area of the heat-insulating organic boss, and the thin film layer 4 is made of PZT material;
[0047]D, adopt stripping method to prepare upper electrode 5 on the surface of described film layer 4, described upper electrode 5 adopts Ni ...
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