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LED chip structure with high luminous efficiency

A LED chip, high light efficiency technology, applied in electrical components, circuits, semiconductor devices, etc., can solve problems such as uneven current, and achieve the effect of improving light efficiency

Inactive Publication Date: 2016-11-16
GUANGDONG DELI PHOTOELECTRIC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In order to solve the above technical problems, the object of the present invention is to provide a high light efficiency LED chip structure, set a plurality of scattered electrode guide holes, solve the problem of uneven current inside the N-type layer, and improve the light efficiency of the chip

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  • LED chip structure with high luminous efficiency
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Embodiment Construction

[0017] The idea, specific structure and technical effects of the present invention will be clearly and completely described below in conjunction with the embodiments and accompanying drawings, so as to fully understand the purpose, features and effects of the present invention. Apparently, the described embodiments are only some of the embodiments of the present invention, rather than all of them. Based on the embodiments of the present invention, other embodiments obtained by those skilled in the art without creative efforts belong to The protection scope of the present invention.

[0018] refer to figure 1 , the present invention provides a preferred embodiment of a high-efficiency LED chip structure, including a sapphire substrate 1, on which an N-type GaN layer 2, a quantum well active region 3, and a P-type GaN layer are sequentially arranged on the sapphire substrate 1 4. The DBR reflective layer 5 forms a plurality of N-type steps; at the same time, since the P-type Ga...

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Abstract

The invention discloses an LED chip structure with high luminous efficiency. The LED chip structure comprises a substrate, wherein an N type layer, a quantum well active region, a P type layer, and a DBR reflective layer are arranged on the substrate in sequence; a contact electrode is arranged on the surface of the LED chip; multiple scattered N electrode guiding holes are formed in the DBR reflective layer in a corrosion manner; conductive metals are arranged in the N electrode guiding holes; and the N electrode guiding holes are connected with the N type layer and the contact electrode respectively. According to the LED chip structure with high luminous efficiency, the multiple scattered N electrode guiding holes are formed in the DBR reflective layer above the N type layer, so that multiple places of the N type layer are electrically connected with the N contact electrode; when the LED chip structure is in use, the current uniformly passes through the N type layer; therefore, the problem of uneven internal current of the N type layer is solved; and the luminous efficiency of the chip is improved.

Description

technical field [0001] The invention relates to the field of LED chips, in particular to a high light efficiency LED chip structure. Background technique [0002] A traditional LED chip includes an N-type layer and a P-type layer. The N-type layer and the P-type layer are provided with a reflective layer and an insulating layer. The insulating layer is provided with a contact electrode, and the contact electrode is respectively connected to the N-type LED through an electrode hole. layer and P-type layer. However, the area and quantity of the electrode guide holes of the traditional LED chip are small, and the electrode guide holes can only be set in one part of the N-type layer and the P-type layer, resulting in uneven current inside the N-type layer and the P-type layer. The P-type layer and the P-type layer usually only play a role in the part where the electrode guide hole is set, which affects the light efficiency of the chip. Contents of the invention [0003] In o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/38H01L33/14
CPCH01L33/382H01L33/14
Inventor 易翰翔李玉珠刘洋吴光芬
Owner GUANGDONG DELI PHOTOELECTRIC